Bonding configurations and optical band gap for nitrogenated amorphous silicon carbide films prepared by pulsed laser ablation

2002 ◽  
Vol 92 (5) ◽  
pp. 2485-2489 ◽  
Author(s):  
S. Trusso ◽  
F. Barreca ◽  
F. Neri
Keyword(s):  
Silicon Carbide ◽  
Laser Ablation ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Optical Band Gap ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Amorphous Silicon Carbide

Luminescent amorphous silicon carbide ultrafine nanoparticles fabricated by pulsed-laser ablation

2017 ◽  
Vol 123 (4) ◽  
Author(s):  
Jun Zhu ◽  
Shan Hu ◽  
Wei Wang ◽  
Wei-wei Xia ◽  
Hai-tao Chen ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Laser Ablation ◽  
Amorphous Silicon ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Amorphous Silicon Carbide

FULL-COLOR PHOTO- AND ELECTRO-LUMINESCENCE FROM HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS PREPARED BY USING ORGANIC SOURCE

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1057-1061 ◽  
Author(s):  
JUN XU ◽  
TIANFU MA ◽  
XIAOHUI HUANG ◽  
LI WANG ◽  
WEI LI ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Silicon Carbide ◽  
Hydrogenated Amorphous ◽  
Electro Luminescence ◽  
Organic Source

A series of hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films (0 < x ≤ 1) were grown by using an organic source, xylene (C8H10), instead of methane (CH4) in a conventional plasma enhanced chemical vapor deposition system. The optical band gap of these samples was altered over a wide range by changing the gas ratio of C8H10 to SiH4, the maximum value can be reached as high as 3.6eV. Photoluminescence (PL) measurements were carried out at room temperature by using a Xe lamp as an excitation light. It was found that the PL peak is blue shifted with increasing optical band gap. The xylene-based a-SiC:H electro-luminescence (EL) device structure was also fabricated and room temperature EL behavior was investigated. It was found that the EL peak depended on the band gap of a-C:H films and a stable emission can be obtained by using the suitable structure parameters.

Fluorescent carbon nano dots from lignite: unveiling the impeccable evidence for quantum confinement

2016 ◽  
Vol 18 (17) ◽  
pp. 12065-12073 ◽  
Author(s):  
Senthil Kumar Thiyagarajan ◽  
Suresh Raghupathy ◽  
Dharmalingam Palanivel ◽  
Kaviyarasan Raji ◽  
Perumal Ramamurthy
Keyword(s):  
Laser Ablation ◽  
Size Effect ◽  
Band Gap ◽  
Quantum Confinement ◽  
Optical Band Gap ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Quantum Size Effect ◽  
Quantum Size ◽  
Fluorescent Carbon

Pulsed laser ablation of lignite in EDA solution exfoliates CDs (CD3) which exhibit the influence of quantum size effect in tuning the optical band gap of CDs.

Raman microscopy study of pulsed laser ablation deposited silicon carbide films

1998 ◽  
Vol 332 (1-2) ◽  
pp. 290-294 ◽  
Author(s):  
Fortunato Neri ◽  
Sebastiano Trusso ◽  
Cirino Vasi ◽  
Francesco Barreca ◽  
Paolo Valisa
Keyword(s):  
Silicon Carbide ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Microscopy Study ◽  
Raman Microscopy

Production of microstructures in wide-band-gap and organic materials using pulsed laser ablation at 157 nm wavelength

2010 ◽  
Vol 101 (3) ◽  
pp. 491-495 ◽  
Author(s):  
Falk Haehnel ◽  
Rene Bertram ◽  
Guenter Reisse ◽  
Rene Boettcher ◽  
Steffen Weissmantel
Keyword(s):  
Laser Ablation ◽  
Band Gap ◽  
Organic Materials ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Wide Band ◽  
Wide Band Gap

Band gap modulation in CdSxSe1−xnanowires synthesized by a pulsed laser ablation with the Au catalyst

2006 ◽  
Vol 17 (15) ◽  
pp. 3775-3778 ◽  
Author(s):  
Young-Jin Choi ◽  
In-Sung Hwang ◽  
Jae-Hwan Park ◽  
Sahn Nahm ◽  
Jae-Gwan Park
Keyword(s):  
Laser Ablation ◽  
Band Gap ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Au Catalyst ◽  
Band Gap Modulation

The effect of nitrogen on pulsed laser deposition of amorphous silicon carbide films: Properties and structure

1996 ◽  
Vol 11 (8) ◽  
pp. 1979-1986 ◽  
Author(s):  
Andrew L. Yee ◽  
H. C. Ong ◽  
Fulin Xiong ◽  
R. P. H. Chang
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Mechanical Performance ◽  
Pulsed Laser ◽  
High Hardness ◽  
Analytical Techniques ◽  
Intrinsic Stress ◽  
Vacuum System ◽  
Residual Water ◽  
Amorphous Silicon Carbide

The influence of nitrogen on amorphous silicon carbide films deposited at room temperature using pulsed laser ablation has been investigated. Depositions were carried out either in ultrahigh vacuum or in a nitrogen ambient ranging from 10 to 100 mT. The mechanical and optical properties, as well as composition and structure of the resulting films, were evaluated using a variety of analytical techniques. Vacuum-deposited films exhibited high hardness but suffered from high compressive stresses (>1 GPa). At low nitrogen background pressures (<30 mT), films with an optimum balance among hardness (∼16 GPa), adhesion, and intrinsic stress (<220 MPa) were found, making them ideal candidates for protective coating applications. As nitrogen pressure was increased, mechanical performance degraded due to the increasing amount of SiO2 found in the films as evidenced by spectroscopic ellipsometry, infrared spectroscopy, and Auger electron spectroscopy measurements. The source of oxygen is attributed to residual water vapor present in our vacuum system. Optical emission spectroscopy was used to confirm the presence of Si–O species in the laser-induced plasma plume.

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