FULL-COLOR PHOTO- AND ELECTRO-LUMINESCENCE FROM HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS PREPARED BY USING ORGANIC SOURCE

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1057-1061 ◽  
Author(s):  
JUN XU ◽  
TIANFU MA ◽  
XIAOHUI HUANG ◽  
LI WANG ◽  
WEI LI ◽  
...  

A series of hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films (0 < x ≤ 1) were grown by using an organic source, xylene (C8H10), instead of methane (CH4) in a conventional plasma enhanced chemical vapor deposition system. The optical band gap of these samples was altered over a wide range by changing the gas ratio of C8H10 to SiH4, the maximum value can be reached as high as 3.6eV. Photoluminescence (PL) measurements were carried out at room temperature by using a Xe lamp as an excitation light. It was found that the PL peak is blue shifted with increasing optical band gap. The xylene-based a-SiC:H electro-luminescence (EL) device structure was also fabricated and room temperature EL behavior was investigated. It was found that the EL peak depended on the band gap of a-C:H films and a stable emission can be obtained by using the suitable structure parameters.

1985 ◽  
Vol 49 ◽  
Author(s):  
Hideki Matsumura ◽  
Takashi Uesugi ◽  
Hisanori Ihara

AbstractA new type of hydro—fluorinated amorphous silicon—carbide (a-SiC:F:H) is produced by the glow discharge decomposition of gas mixture of CF4, H2 and intermediate species SiF2. The electrical, optical and structural properties of this a—SiC:F:H are studied and the results are compared with the similar results for a—SiC:F:H produced from gas mixture of CH4, H2 and SiF2 and also for hydrogenated amorphous silicon carbide (a—SiC:H) produced from CH4 and SiH4 gas mixture. It is found that the optical band gap can be increased without degradation of photo—conductive properties only when amorphous silicon carbide is produced from CF4, H2 and SiF2 gas mixture.


2020 ◽  
Vol 15 (2) ◽  
pp. 1-4
Author(s):  
Deissy Johanna Feria ◽  
Marcelo Carreño ◽  
Ricardo Rangel ◽  
Ines Pereyra

The production of high quality graphene without the need for catalyst metals as in the case of chemical vapor deposition (CVD) techniques remain a challenge. Silicon carbide is one of the materials with potential to form graphene films on its surface through thermal decomposition when subjected to high temperatures and ultrahigh vacuum. This technique is highly desirable since it enables the elimination of corrosion and transfer steps, which can leave residues in the graphene structure and alter its quality, as well as its electrical proprieties, however it is a costly and time consuming method. In this work, we present the production of graphene trails by direct laser radiation writing at room temperature and atmospheric pressure on hydrogenated amorphous silicon carbide films (SiC-a:H) produced by Plasma Enhanced Chemical Vapor Deposition (PECVD).  Graphene trails of approximately 1cm x 4μm were obtained with patterns designed by computer Aided Design (CAD) software. Variations were made in both scanning speed and laser focal length, identifying a great dependence on the graphene quality with these two parameters. The best results of the Raman Spectroscopy Mappings showed high quality graphene with distance between point defects (LD) of 20nm, crystallite size (La) of 25nm and few layers (2-3). In addition, the electrical measurements from Au/Ti (20nm/100nm) electrodes deposited by electron beam evaporation showed high conductivity, with sheet resistances (Rs) from 0.7kΩ to 1.3 kΩ per square. This technique opens a great possibility of manufacturing devices for applications in electronics, being a fast, efficient and low cost method.


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