Production of microstructures in wide-band-gap and organic materials using pulsed laser ablation at 157 nm wavelength

2010 ◽  
Vol 101 (3) ◽  
pp. 491-495 ◽  
Author(s):  
Falk Haehnel ◽  
Rene Bertram ◽  
Guenter Reisse ◽  
Rene Boettcher ◽  
Steffen Weissmantel
Keyword(s):  
Laser Ablation ◽  
Band Gap ◽  
Organic Materials ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Wide Band ◽  
Wide Band Gap

scholarly journals Growth of Highly Doped P-Type Znte Films by Pulsed Laser ablation in Molecular Nitrogen

1995 ◽  
Vol 388 ◽  
Author(s):  
Douglas H. Lowndes ◽  
C. M. Rouleau ◽  
J. W. Mccamy ◽  
J. D. Budai ◽  
D. B. Poker ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Nitrogen ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Wide Band ◽  
Atomic Nitrogen ◽  
Wide Band Gap ◽  
P Type

AbstractHighly p-doped ZnTe films have been grown on semi-insulating GaAs (001) substrates by pulsed-laser ablation (PLA) of a stoichiometric ZnTe target in a high-purity N2 ambient without the use of any assisting (DC or aC) plasma source. Free hole concentrations in the mid-1019 cm-3 to 1020 cm-3 range were obtained for a range of nitrogen pressures the maximum hole concentration equals the highest hole doping reported to date for any wide band gap II-VI compound. the highest hole mobilities were attained for nitrogen pressures of 50–100 mTorr (~6.5–13 Pa). Unlike recent experiments in which atomic nitrogen beams, extracted from RF and DC plasma sources, were used to produce p-type doping during molecular beam epitaxy deposition, spectroscopic measurements carried out during PLA of ZnTe in N2 do not reveal the presence of atomic nitrogen. This suggests that the high hole concentrations in laser ablated ZnTe are produced by a new and different mechanism, possibly energetic beam-induced reactions with excited molecular nitrogen adsorbed on the growing film surface, or transient formation of Zn-N complexes in the energetic ablation plume. This appears to be the first time that any wide band gap (Eg 2 eV) II-VI compound (or other) semiconductor has been impurity-doped from the gas phase by laser ablation. In combination with the recent discovery that epitaxial ZnSe1-xSx films and heterostructures with continuously variable composition can be grown by ablation from a single target of fixed composition, these results appear to open the way to explore PLA growth and doping of compound semiconductors as a possible alternative to molecular beam epitaxy.

Size Effect in Germanium Nanostructures Fabricated by Pulsed Laser Deposition

1999 ◽  
Vol 581 ◽  
Author(s):  
K.M. Hassan ◽  
A.K. Sharma ◽  
J. Narayan ◽  
J.F. Muth ◽  
C.W. Teng ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Quantum Confinement ◽  
Three Dimensional ◽  
Pulsed Laser ◽  
Wide Band ◽  
Laser Deposition ◽  
Island Growth ◽  
Wide Band Gap ◽  
Average Size

ABSTRACTWe have fabricated Ge nanostructures buried in AlN and Al2O3 matrices grown on Si(111) and sapphire substrates by pulsed laser deposition. Our approach involved three-dimensional island growth of low band-gap material followed by a layer of wide band-gap material. The nanodots were uniformly distributed in between alternating layers of AlN or Al2O3. It was observed that these nanodots exhibit crystalline structure when grown at 300-500 °C. The average size of Ge islands was determined to be ∼5-15 nm, which could be varied by controlling laser deposition and substrate parameters. The Raman spectrum showed a peak of the Ge-Ge vibrational mode downward shifted upto 295 cm− which is caused by quantum confinement of phonons in the Ge-dots. The photoluminescence of the Ge dots (size ∼15nm) was blue shifted by ∼0.266 eV from the bulk Ge value of 0.73 eV at 77 K, resulting in a distinct peak at ∼1.0 eV. The spectral positions of both E1 and E2 transitions in the absorption spectra at room temperature and 77K shift toward higher energy as the Ge dot size decreases. The interpretation of these behaviors in terms of quantum confinement is discussed in this work, and the importance of pulsed laser deposition in fabricating novel nanostructures is emphasized

Laser ablation of wide band-gap materials: The role of defects in single crystal MgO

1993 ◽  
Author(s):  
J. T. Dickinson ◽  
L. C. Jensen ◽  
R. L. Webb ◽  
S. C. Langford
Keyword(s):  
Laser Ablation ◽  
Single Crystal ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap

scholarly journals Femtosecond laser ablation of wide band-gap materials

2012 ◽  
Vol 261 ◽  
pp. 705-707 ◽  
Author(s):  
Hidetoshi Takayama ◽  
Toshiro Maruyama
Keyword(s):  
Laser Ablation ◽  
Femtosecond Laser ◽  
Band Gap ◽  
Femtosecond Laser Ablation ◽  
Wide Band ◽  
Wide Band Gap

Ultrafast Laser Ablation and Deposition of Wide Band Gap Semiconductors

2011 ◽  
Vol 115 (8) ◽  
pp. 3203-3211 ◽  
Author(s):  
Mikel Sanz ◽  
Marien López-Arias ◽  
José F. Marco ◽  
Rebeca de Nalda ◽  
Salvatore Amoruso ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Band Gap ◽  
Wide Band ◽  
Ultrafast Laser ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors ◽  
Ultrafast Laser Ablation

Band gap modulation in CdSxSe1−xnanowires synthesized by a pulsed laser ablation with the Au catalyst

2006 ◽  
Vol 17 (15) ◽  
pp. 3775-3778 ◽  
Author(s):  
Young-Jin Choi ◽  
In-Sung Hwang ◽  
Jae-Hwan Park ◽  
Sahn Nahm ◽  
Jae-Gwan Park
Keyword(s):  
Laser Ablation ◽  
Band Gap ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Au Catalyst ◽  
Band Gap Modulation

Precise microfabrication of wide band gap semiconductors (SiC and GaN) by VUV–UV multiwavelength laser ablation

1998 ◽  
Vol 127-129 ◽  
pp. 793-799 ◽  
Author(s):  
J. Zhang ◽  
K. Sugioka ◽  
S. Wada ◽  
H. Tashiro ◽  
K. Toyoda ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors ◽  
Multiwavelength Laser

scholarly journals Laser Induced Anchoring of Nickel Oxide Nanoparticles on Polymeric Graphitic Carbon Nitride Sheets Using Pulsed Laser Ablation for Efficient Water Splitting under Visible Light

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1098 ◽  
Author(s):  
Umair Baig ◽  
Abuzar Khan ◽  
Mohammad A. Gondal ◽  
Mohamed A. Dastageer ◽  
Wail S. Falath
Keyword(s):  
Laser Ablation ◽  
Visible Light ◽  
Nickel Oxide ◽  
Band Gap ◽  
Water Splitting ◽  
Carbon Nitride ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Photocurrent Density ◽  
Photoelectrochemical Performance

A visible-light-active nickel oxide–graphitic carbon nitride (NiO@g-CN) hetero-structured nanocomposite was synthesized for the first time by pulsed laser ablation in liquid and used as a photoanode material in photoelectrochemical water-splitting reaction with a solar simulator. It was found that the photoelectrochemical performance of PLAL synthesized NiO@g-CN nanocomposite as photoanode, compared to g-CN as photoanode showed fourfold enhancements in photocurrent density under visible light. FT-IR, XRD, FE-SEM, and EDX consistently showed the proper anchoring of nano-sized NiO on g-CN. UV-DRS and the band gap estimation showed the narrowing down of the band gap energy and consequent enhancement in the visible-light absorption, whereas photoluminescence spectroscopy confirmed the reduction of the recombination of photo-excited electron hole pairs as a result of the anchoring of NiO on g-CN. The photoelectrochemical performance of g-CN and the NiO@g-CN nanocomposite photoanodes was compared by linear sweep voltammetry (LSV), Chronoamperometry (I-t), and Electrochemical Impedance Spectroscopy (EIS). All of these results of the characterization studies account for the observed fourfold enhancement of photocurrent density of NiO@g-CN nanocomposite as photoanode in the photoelectrochemical reaction.

scholarly journals Wide-band gap semiconductors with noble metals for photonic applications

2014 ◽  
Author(s):  
Αναστάσιος Σιώζιος
Keyword(s):  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Noble Metals ◽  
Pulsed Laser ◽  
Wide Band ◽  
Laser Deposition ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors

Βασικό αντικείμενο της συγκεκριμένης εργασίας είναι η ανάπτυξη και η μελέτη των δομικών και οπτικών ιδιοτήτων νανοσύνθετων υμενίων αποτελούμενων απο διαφανείς ανόργανες μήτρες με εγκλείσματα μετάλλων. Η συγκεκριμένη κατηγορία υλικών έχει προσελκύσει το ερευνητικό ενδιαφέρον εξαιτίας των εξαιρετικών οπτικών ιδιοτήτων που παρουσιάζουν οι οποίες στηρίζονται στον συντονισμό επιφανειακού πλασμονίου (SPR) ενώ η παρουσία μιας σκληρής ανόργανης μήτρας καθιστά τα υμένια αυτά ικανά να εφαρμοστούν ακόμη και στις πιο απαιτητηικες συνθηκες. Και μπορούν να βρούν άμεση εφαρμογή στην φωτονική για την χειραγωγηση του φωτός, για εξοικονόμηση και διαχείρηση ενέργειας, φωτονικούς αισθητήρες, αντιανακλαστικές επιστρώσεις, χρωματιστές επικαλύψεις κλπ. Στα πλαίσια της συγκεριμένης διδακτορικής διατριβής αναπτύχθηκαν και μελετήθηκαν ως προς τις οπτικές και δομικές τους ιδιότητες νανοσύνθετα υμένια μήτρας ΙΙΙ-νιτριδίων (AlN, AlxIn1-xN) με εγκλέισματα μετάλλων αργύρου με τις τεχνικές της Ιοντοβολής ( Sputtering) και της Εναπόθεσης με Παλμικό λέιζερ ( Pulsed Laser Deposition, PLD). Πιο συγκεκριμένα αναπτύχθηκαν δυαδικά συστήματα νιτριδίου του αλουμινίου με αργύρου σε τρεις διαφορετικές διαμορφώσεις:i)Νανοσύνθετα υμένια μήτρας νιτριδίου του αλουμινίου με μεταλλικά νανοσωματίδια μέσα στην μήτραii)Νανοσύνθετα υμένια με τον άργυρο ατομικά διεσπαρμένο εντός της μήτρα νιτριδίου του αλουμινίουiii)Πολυστρωματικά υμένια αποτελούμενα από εναλλασσόμενα λεπτά στρώματα νιτριδίου του αλουμινίου και άργυρο.Απο την ανάλυση των πειραματικών δεδομένων προέκυψε ότι είναι δυνατή η ανάπτυξη φωτοευαίσθητων patterns τα οποία μπορούν να χρησιμοποιηθούν σε μιά πλιάδα τεχνολογικών εφαρμογών όπως η χειραγώγιση του φωτός, και η κρυπτογράφιση πληροφοριών. Η δημιουργία των φωτοευαίσθητων patterns μπορεί να επιτευχθείο είτε με την αύξηση του μεγέθους των νανοσωματιδίων με ταυτόχρονη μεταβολή του δείκτη διάθλασης της μήτρας στην περίπτωση των νανοσύνθετων υμενίων που αναπτύχθηκαν με την τεχνική PLD είτε με την μετατροπή των μεταλλικών στρωμάτων σε μεταλλικά νανοσωματίδια στην μερίπτωση των πολυστρωματικών υμενίων που αναπτύχθηκαν με την τεχνική του Sputtering μετά υποβολή τους σε ανόπτηση με παλμικό laser.

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