Tracing deeply buried InAs∕GaAs quantum dots using atomic force microscopy and wet chemical etching

2005 ◽  
Vol 86 (6) ◽  
pp. 063111 ◽  
Author(s):  
G. Fasching ◽  
K. Unterrainer ◽  
W. Brezna ◽  
J. Smoliner ◽  
G. Strasser
2018 ◽  
Vol 282 ◽  
pp. 284-287
Author(s):  
Harold Philipsen ◽  
Sander Teck ◽  
Nils Mouwen ◽  
Wouter Monnens ◽  
Quoc Toan Le

The wet-chemical etching of ruthenium in acidic solutions of cerium (IV) has been investigated using electrochemical methods. Etch rates were determined using Rutherford backscattering spectroscopy (RBS) and post-etching surface roughness was investigated using atomic force microscopy (AFM). Low-k material is compatible with the etchant, however, residues were formed.


2008 ◽  
Vol 130 (32) ◽  
pp. 10648-10655 ◽  
Author(s):  
Jennifer F. Campbell ◽  
Ingrid Tessmer ◽  
H. Holden Thorp ◽  
Dorothy A. Erie

2005 ◽  
Vol 102 (3) ◽  
pp. 227-232 ◽  
Author(s):  
B. Tiribilli ◽  
D. Bani ◽  
F. Quercioli ◽  
A. Ghirelli ◽  
M. Vassalli

2002 ◽  
Vol 28 (2) ◽  
pp. 139-141
Author(s):  
V. P. Evtikhiev ◽  
O. V. Konstantinov ◽  
E. Yu. Kotel’nikov ◽  
A. V. Matveentsev ◽  
A. N. Titkov ◽  
...  

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