Ab initio study of metal gate electrode work function

2005 ◽  
Vol 86 (7) ◽  
pp. 073118 ◽  
Author(s):  
Seongjun Park ◽  
Luigi Colombo ◽  
Yoshio Nishi ◽  
Kyeongjae Cho
Keyword(s):  
Ab Initio ◽  
Work Function ◽  
Ab Initio Study ◽  
Gate Electrode ◽  
Metal Gate

Highly Reliable Metal Gate nMOSFETs by Improved CVD-WSix films with Work Function of 4.3eV

2004 ◽  
Vol 811 ◽  
Author(s):  
Kazuaki Nakajima ◽  
Hiroshi Nakazawa ◽  
Katsuyuki Sekine ◽  
Kouji Matsuo ◽  
Tomohiro Saito ◽  
...  
Keyword(s):  
Work Function ◽  
Leakage Current ◽  
Power Supply ◽  
Supply Voltage ◽  
Gate Length ◽  
Gate Electrode ◽  
Metal Gate ◽  
Power Supply Voltage ◽  
Drive Current

ABSTRACTIn this paper, we first propose an improved CVD-WSix metal gate suitable for use with nMOSFETs. Work function of CVD-WSi3.9 gate estimated from C-V measurements was 4.3eV. The nMOSFET using CVD-WSi3.9 gate electrode showed that Vth variation of L/W=1 μm/10μm nMOSFETs can be suppressed to be lower than 8mV in 22chip. In CVD-WSi3.9 gate MOSFETs with gate length of 50nm, a drive current of 636μA/μm was achieved for off-state leakage current of 35nA/μm at 1.0V of power supply voltage. By using CVD-WSi3.9 gate electrode, highly reliable metal gate nMOSFETs can be realized.

Investigation of work function and surface energy of aluminum: An ab-initio study

2013 ◽  
Author(s):  
Shuguang Cheng ◽  
Cher Ming Tan ◽  
Tianqi Deng ◽  
Feifei He ◽  
Shuai Zhang ◽  
...  
Keyword(s):  
Surface Energy ◽  
Ab Initio ◽  
Work Function ◽  
Ab Initio Study

Thermally stable high effective work function TaCN thin films for metal gate electrode applications

2009 ◽  
Vol 105 (5) ◽  
pp. 053516 ◽  
Author(s):  
C. Adelmann ◽  
J. Meersschaut ◽  
L.-Å. Ragnarsson ◽  
T. Conard ◽  
A. Franquet ◽  
...  
Keyword(s):  
Thin Films ◽  
Work Function ◽  
Thermally Stable ◽  
Gate Electrode ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function

Ab initio study of the effects of thin CsI coatings on the work function of graphite cathodes

2007 ◽  
Vol 91 (14) ◽  
pp. 144102 ◽  
Author(s):  
Vasilios Vlahos ◽  
John H. Booske ◽  
Dane Morgan
Keyword(s):  
Ab Initio ◽  
Work Function ◽  
Ab Initio Study

Ab initio Study of Metal Grain Orientation-Dependent Work Function and its Impact on FinFET Variability

2013 ◽  
Vol 60 (9) ◽  
pp. 2728-2733 ◽  
Author(s):  
Samarth Agarwal ◽  
Rajan Kumar Pandey ◽  
Jeffrey B. Johnson ◽  
Abhisek Dixit ◽  
Mohit Bajaj ◽  
...  
Keyword(s):  
Ab Initio ◽  
Work Function ◽  
Grain Orientation ◽  
Ab Initio Study

Ab initio study of Al–Ni bilayers on SiO2: Implications to effective work function modulation in gate stacks

2009 ◽  
Vol 105 (1) ◽  
pp. 013711 ◽  
Author(s):  
Blanka Magyari-Köpe ◽  
Seongjun Park ◽  
Luigi Colombo ◽  
Yoshio Nishi ◽  
Kyeongjae Cho
Keyword(s):  
Ab Initio ◽  
Work Function ◽  
Ab Initio Study ◽  
Gate Stacks ◽  
Effective Work ◽  
Effective Work Function

Work Function Shift Mechanism of Metal-Gate Electrode with Ru∕Ti Bilayer

2007 ◽  
Vol 10 (2) ◽  
pp. H63 ◽  
Author(s):  
In-Sung Park ◽  
Han-Kyoung Ko ◽  
Taeho Lee ◽  
Jungho Park ◽  
Duck-Kyun Choi ◽  
...  
Keyword(s):  
Work Function ◽  
Gate Electrode ◽  
Metal Gate
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