Deep-level characterization of N-doped ZnO films prepared by reactive magnetron sputtering

2005 ◽  
Vol 87 (23) ◽  
pp. 232104 ◽  
Author(s):  
Yoshitaka Nakano ◽  
Takeshi Morikawa ◽  
Takeshi Ohwaki ◽  
Yasunori Taga
2006 ◽  
Vol 957 ◽  
Author(s):  
Yoshitaka Nakano ◽  
Takeshi Morikawa ◽  
Takeshi Ohwaki

ABSTRACTWe report on visible-light sensitivity in N-doped ZnO (ZnO:N) films that were deposited on ITO/quartz substrates by reactive magnetron sputtering. Colored ZnO:N samples showed enhanced polycrystallization and a significant decrease in optical band gap from 3.1 to 2.3 eV with increasing N doping concentration, as determined by x-ray diffraction and optical absorption measurements. Deep-level optical spectroscopy measurements revealed three characteristic deep levels located at ∼0.98, ∼1.20, and ∼2.21 eV below the conduction band. In particular, the pronounced 2.21 eV band is newly introduced by the N doping and behaves as part of the valence band, resulting in the band-gap narrowing of ZnO. Therefore, this deep level is probably one origin of visible-light sensitivity in ZnO:N.


2010 ◽  
Vol 100 (1) ◽  
pp. 79-82 ◽  
Author(s):  
Jing Qi ◽  
Daqiang Gao ◽  
Jinhong Liu ◽  
Wenge Yang ◽  
Qi Wang ◽  
...  

2005 ◽  
Vol 59 (21) ◽  
pp. 2611-2614 ◽  
Author(s):  
Z.B. Fang ◽  
Y.S. Tan ◽  
H.X. Gong ◽  
C.M. Zhen ◽  
Z.W. He ◽  
...  

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