Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric

Y. Xuan; H. C. Lin; P. D. Ye; G. D. Wilk

doi:10.1063/1.2217258

Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric

Applied Physics Letters ◽

10.1063/1.2217258 ◽

2006 ◽

Vol 88 (26) ◽

pp. 263518 ◽

Cited By ~ 127

Author(s):

Y. Xuan ◽

H. C. Lin ◽

P. D. Ye ◽

G. D. Wilk

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Enhancement Mode ◽

Capacitance Voltage ◽

Effect Transistor ◽

Al2o3 Gate Dielectric

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Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with Al2O3 gate dielectric

Applied Physics Letters ◽

10.1063/1.2931708 ◽

2008 ◽

Vol 92 (20) ◽

pp. 203505 ◽

Cited By ~ 27

Author(s):

D. Shahrjerdi ◽

T. Akyol ◽

M. Ramon ◽

D. I. Garcia-Gutierrez ◽

E. Tutuc ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Enhancement Mode ◽

Effect Transistor ◽

Al2o3 Gate Dielectric

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Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectric

Applied Physics Letters ◽

10.1063/1.3614446 ◽

2011 ◽

Vol 99 (3) ◽

pp. 033502 ◽

Cited By ~ 12

Author(s):

J. H. Yum ◽

T. Akyol ◽

M. Lei ◽

D. A. Ferrer ◽

Todd. W. Hudnall ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric

Applied Physics Letters ◽

10.1063/1.2969282 ◽

2008 ◽

Vol 93 (5) ◽

pp. 053504 ◽

Cited By ~ 48

Author(s):

Y. C. Chang ◽

W. H. Chang ◽

H. C. Chiu ◽

L. T. Tung ◽

C. H. Lee ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Effect Transistor

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Performance enhancement of AlGaN/GaN metal-oxide-semiconductor heterojunction field-effect transistor (MOSHFET) with atomic layer deposition (ALD) of high-k HfAlO gate dielectric layer

2011 International Semiconductor Device Research Symposium (ISDRS) ◽

10.1109/isdrs.2011.6135162 ◽

2011 ◽

Cited By ~ 1

Author(s):

Bongmook Lee ◽

Young-Hwan Choi ◽

Casey Kirkpatrick ◽

Alex Q. Huang ◽

Veena Misra

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Performance Enhancement ◽

Gate Dielectric ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition ◽

High K ◽

Effect Transistor

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Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition

Applied Physics Letters ◽

10.1063/1.1641527 ◽

2004 ◽

Vol 84 (3) ◽

pp. 434-436 ◽

Cited By ~ 125

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

B. Yang ◽

J. Kwo ◽

H.-J. L. Gossmann ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Effect Transistor

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Ga2O3(Gd2O3)∕Si3N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion

Applied Physics Letters ◽

10.1063/1.2817742 ◽

2007 ◽

Vol 91 (22) ◽

pp. 223502 ◽

Cited By ~ 25

Author(s):

J. F. Zheng ◽

W. Tsai ◽

T. D. Lin ◽

Y. J. Lee ◽

C. P. Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Enhancement Mode ◽

Effect Transistor

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GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

Materials Science and Engineering B ◽

10.1016/j.mseb.2006.08.020 ◽

2006 ◽

Vol 135 (3) ◽

pp. 282-284 ◽

Cited By ~ 26

Author(s):

Y.Q. Wu ◽

P.D. Ye ◽

G.D. Wilk ◽

B. Yang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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Correlations between structural and electrical properties of nitrided SiOx thin films used as power metal oxide semiconductor field effect transistor gate dielectric

Applied Physics Letters ◽

10.1063/1.3021404 ◽

2008 ◽

Vol 93 (18) ◽

pp. 182109

Author(s):

E. Fazio ◽

F. Neri ◽

G. Curró M. Camalleri ◽

D. Calí

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Structural And Electrical Properties ◽

Effect Transistor

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Investigation of Thermal Stability of TiN Film Formed by Atomic Layer Deposition Using Tetrakis(dimethylamino)titanium Precursor for Metal-Gate Metal–Oxide–Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04da16 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DA16 ◽

Cited By ~ 7

Author(s):

Tetsuro Hayashida ◽

Kazuhiko Endo ◽

Yongxun Liu ◽

Takahiro Kamei ◽

Takashi Matsukawa ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Tin Film ◽

Layer Deposition ◽

Effect Transistor ◽

Thermal Stability Of

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Analytical modeling of a split-gate dielectric modulated metal-oxide-semiconductor field-effect transistor for application as a biosensor

2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) ◽

10.1109/icdcsyst.2014.6926183 ◽

2014 ◽

Cited By ~ 3

Author(s):

Ajay ◽

Rakhi Narang ◽

Manoj Saxena ◽

Mridula Gupta

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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