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GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric
Materials Science and Engineering B
◽
10.1016/j.mseb.2006.08.020
◽
2006
◽
Vol 135
(3)
◽
pp. 282-284
◽
Cited By ~ 26
Author(s):
Y.Q. Wu
◽
P.D. Ye
◽
G.D. Wilk
◽
B. Yang
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistor
◽
Gate Dielectric
◽
Atomic Layer
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Effect Transistor
Download Full-text
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Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectric
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◽
10.1063/1.3614446
◽
2011
◽
Vol 99
(3)
◽
pp. 033502
◽
Cited By ~ 12
Author(s):
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◽
T. Akyol
◽
M. Lei
◽
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◽
Todd. W. Hudnall
◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistor
◽
Gate Dielectric
◽
Atomic Layer
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
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Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric
Applied Physics Letters
◽
10.1063/1.2969282
◽
2008
◽
Vol 93
(5)
◽
pp. 053504
◽
Cited By ~ 48
Author(s):
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◽
W. H. Chang
◽
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◽
L. T. Tung
◽
C. H. Lee
◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistor
◽
Gate Dielectric
◽
Atomic Layer
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Inversion Channel
◽
Effect Transistor
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Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition
Applied Physics Letters
◽
10.1063/1.1641527
◽
2004
◽
Vol 84
(3)
◽
pp. 434-436
◽
Cited By ~ 125
Author(s):
P. D. Ye
◽
G. D. Wilk
◽
B. Yang
◽
J. Kwo
◽
H.-J. L. Gossmann
◽
...
Keyword(s):
Atomic Layer Deposition
◽
Metal Oxide
◽
Field Effect
◽
Field Effect Transistor
◽
Gate Dielectric
◽
Atomic Layer
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Layer Deposition
◽
Effect Transistor
Download Full-text
Correlations between structural and electrical properties of nitrided SiOx thin films used as power metal oxide semiconductor field effect transistor gate dielectric
Applied Physics Letters
◽
10.1063/1.3021404
◽
2008
◽
Vol 93
(18)
◽
pp. 182109
Author(s):
E. Fazio
◽
F. Neri
◽
G. Curró M. Camalleri
◽
D. Calí
Keyword(s):
Thin Films
◽
Electrical Properties
◽
Metal Oxide
◽
Field Effect
◽
Field Effect Transistor
◽
Gate Dielectric
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Structural And Electrical Properties
◽
Effect Transistor
Download Full-text
Analytical modeling of a split-gate dielectric modulated metal-oxide-semiconductor field-effect transistor for application as a biosensor
2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)
◽
10.1109/icdcsyst.2014.6926183
◽
2014
◽
Cited By ~ 3
Author(s):
Ajay
◽
Rakhi Narang
◽
Manoj Saxena
◽
Mridula Gupta
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Analytical Modeling
◽
Field Effect Transistor
◽
Gate Dielectric
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Effect Transistor
Download Full-text
Atomic layer deposited (TiO2)x(Al2O3)1−x/In0.53Ga0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications
Applied Physics Letters
◽
10.1063/1.3684803
◽
2012
◽
Vol 100
(6)
◽
pp. 062905
◽
Cited By ~ 25
Author(s):
C. Mahata
◽
S. Mallik
◽
T. Das
◽
C. K. Maiti
◽
G. K. Dalapati
◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistor
◽
Atomic Layer
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Gate Stacks
◽
Effect Transistor
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GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
Applied Physics Letters
◽
10.1063/1.1590743
◽
2003
◽
Vol 83
(1)
◽
pp. 180-182
◽
Cited By ~ 250
Author(s):
P. D. Ye
◽
G. D. Wilk
◽
B. Yang
◽
J. Kwo
◽
S. N. G. Chu
◽
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Keyword(s):
Atomic Layer Deposition
◽
Metal Oxide
◽
Field Effect
◽
Field Effect Transistor
◽
Atomic Layer
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Layer Deposition
◽
Effect Transistor
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High performance atomic-layer-deposited LaLuO3/Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO2 as interfacial passivation layer
Applied Physics Letters
◽
10.1063/1.3462303
◽
2010
◽
Vol 97
(1)
◽
pp. 012106
◽
Cited By ~ 30
Author(s):
J. J. Gu
◽
Y. Q. Liu
◽
M. Xu
◽
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◽
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◽
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Keyword(s):
Metal Oxide
◽
Field Effect
◽
High Performance
◽
Field Effect Transistor
◽
Atomic Layer
◽
Metal Oxide Semiconductor
◽
Passivation Layer
◽
Oxide Semiconductor
◽
Effect Transistor
◽
Thermally Grown
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Characterization of Hf1-xZrxO2Gate Dielectrics with 0≤x≤1 Prepared by Atomic Layer Deposition for Metal Oxide Semiconductor Field Effect Transistor Applications
Japanese Journal of Applied Physics
◽
10.7567/jjap.51.011101
◽
2012
◽
Vol 51
(1R)
◽
pp. 011101
Author(s):
Chen-Kuo Chiang
◽
Chien-Hung Wu
◽
Chin-Chien Liu
◽
Jin-Fu Lin
◽
Chien-Lun Yang
◽
...
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Atomic Layer Deposition
◽
Metal Oxide
◽
Field Effect
◽
Field Effect Transistor
◽
Atomic Layer
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Layer Deposition
◽
Effect Transistor
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Inversion-Mode Self-Aligned $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With HfAlO Gate Dielectric and TaN Metal Gate
IEEE Electron Device Letters
◽
10.1109/led.2008.2001766
◽
2008
◽
Vol 29
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◽
pp. 977-980
◽
Cited By ~ 30
Author(s):
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◽
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◽
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◽
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◽
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◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistor
◽
Gate Dielectric
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Metal Gate
◽
Inversion Mode
◽
Effect Transistor
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