Ga2O3(Gd2O3)∕Si3N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion
2008 ◽
Vol 29
(9)
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pp. 977-980
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2011 ◽
Vol 29
(3)
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pp. 03C122
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2010 ◽
Vol 49
(12)
◽
pp. 124202
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