Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with Dy2O3 gate dielectric

Applied Physics Letters ◽

10.1063/1.2217708 ◽

2006 ◽

Vol 89 (5) ◽

pp. 053504 ◽

Author(s):

Sheng-Chih Chang ◽

Shao-You Deng ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Effects of a Gd capping layer on electrical characteristics of metal-oxide-semiconductor field effect transistors with a TaC gate electrode and a HfSiON gate dielectric

Applied Physics Letters ◽

10.1063/1.3264086 ◽

2009 ◽

Vol 95 (19) ◽

pp. 192113 ◽

Author(s):

Hong Bae Park ◽

Chang Seo Park ◽

Chang Yong Kang ◽

Seung-Chul Song ◽

Byoung Hun Lee ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Gate Electrode ◽

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with ZrO2 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2723861 ◽

2007 ◽

Vol 101 (9) ◽

pp. 094105 ◽

Author(s):

De-Cheng Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-min Lee ◽

Pi-Chun Juan

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.05dc01 ◽

2009 ◽

Vol 48 (5) ◽

pp. 05DC01 ◽

Author(s):

Tetsuro Hayashida ◽

Yongxun Liu ◽

Takashi Matsukawa ◽

Kazuhiko Endo ◽

Shinich O'uchi ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gas Flow ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Nitrogen Gas ◽

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Negative transconductance effect in metal oxide semiconductor field effect transistors fabricated with Ta/sub 2/O/sub 5/ gate dielectric

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) ◽

10.1109/hkedm.2000.904206 ◽

2002 ◽

Author(s):

B.C.M. Lai ◽

J.Y.M. Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Off‐state leakage currents in n‐channel metal‐oxide‐semiconductor field‐effect transistors with 10‐nm thermally nitrided and reoxidized nitrided oxides as the gate dielectric

Applied Physics Letters ◽

10.1063/1.105826 ◽

1991 ◽

Vol 59 (23) ◽

pp. 3006-3008 ◽

Author(s):

S. Fleischer ◽

Z. H. Liu ◽

P. T. Lai ◽

P. K. Ko ◽

Y. C. Cheng

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Leakage Currents

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Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12Å using stacked HfAlOx∕HfO2 gate dielectric

Applied Physics Letters ◽

10.1063/1.2943186 ◽

2008 ◽

Vol 92 (25) ◽

pp. 253506 ◽

Author(s):

Han Zhao ◽

Davood Shahrjerdi ◽

Feng Zhu ◽

Hyoung-Sub Kim ◽

Injo OK ◽

...

Keyword(s):

Indium Phosphide ◽

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness

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Crystalline ZrTiO4 gated p-metal–oxide–semiconductor field effect transistors with sub-nm equivalent oxide thickness featuring good electrical characteristics and reliability

Applied Physics Letters ◽

10.1063/1.4907728 ◽

2015 ◽

Vol 106 (5) ◽

pp. 053508 ◽

Author(s):

Chao-Yi Wu ◽

Ching-Heng Hsieh ◽

Ching-Wei Lee ◽

Yung-Hsien Wu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Equivalent Oxide Thickness

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Energy distribution of interface traps in germanium metal-oxide-semiconductor field effect transistors with HfO2 gate dielectric and its impact on mobility

Applied Physics Letters ◽

10.1063/1.2976632 ◽

2008 ◽

Vol 93 (8) ◽

pp. 083510 ◽

Author(s):

Ruilong Xie ◽

Nan Wu ◽

Chen Shen ◽

Chunxiang Zhu

Keyword(s):

Metal Oxide ◽

Energy Distribution ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps

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GdGaO: A gate dielectric for GaAs metal-oxide-semiconductor field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2738480 ◽

2007 ◽

Vol 25 (3) ◽

pp. 1024 ◽

Author(s):

M. Holland ◽

C. R. Stanley ◽

W. Reid ◽

I. Thayne ◽

G. W. Paterson ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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