Crystalline ZrTiO4 gated p-metal–oxide–semiconductor field effect transistors with sub-nm equivalent oxide thickness featuring good electrical characteristics and reliability
2009 ◽
Vol 48
(5)
◽
pp. 05DC01
◽
1994 ◽
Vol 33
(Part 1, No. 3A)
◽
pp. 1223-1227
◽
2005 ◽
Vol 44
(11)
◽
pp. 7869-7875
◽