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GdGaO: A gate dielectric for GaAs metal-oxide-semiconductor field-effect transistors
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
◽
10.1116/1.2738480
◽
2007
◽
Vol 25
(3)
◽
pp. 1024
◽
Cited By ~ 8
Author(s):
M. Holland
◽
C. R. Stanley
◽
W. Reid
◽
I. Thayne
◽
G. W. Paterson
◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Gate Dielectric
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
Download Full-text
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Cited By
References
Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric
Journal of Applied Physics
◽
10.1063/1.2356902
◽
2006
◽
Vol 100
(7)
◽
pp. 074108
◽
Cited By ~ 13
Author(s):
Chih-Hsiang Hsu
◽
Ming-Tsong Wang
◽
Joseph Ya-Min Lee
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Gate Dielectric
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Electrical Characteristics
Download Full-text
Negative transconductance effect in metal oxide semiconductor field effect transistors fabricated with Ta/sub 2/O/sub 5/ gate dielectric
Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)
◽
10.1109/hkedm.2000.904206
◽
2002
◽
Author(s):
B.C.M. Lai
◽
J.Y.M. Lee
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Gate Dielectric
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
Download Full-text
Off‐state leakage currents in n‐channel metal‐oxide‐semiconductor field‐effect transistors with 10‐nm thermally nitrided and reoxidized nitrided oxides as the gate dielectric
Applied Physics Letters
◽
10.1063/1.105826
◽
1991
◽
Vol 59
(23)
◽
pp. 3006-3008
◽
Cited By ~ 5
Author(s):
S. Fleischer
◽
Z. H. Liu
◽
P. T. Lai
◽
P. K. Ko
◽
Y. C. Cheng
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Gate Dielectric
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Leakage Currents
Download Full-text
Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12Å using stacked HfAlOx∕HfO2 gate dielectric
Applied Physics Letters
◽
10.1063/1.2943186
◽
2008
◽
Vol 92
(25)
◽
pp. 253506
◽
Cited By ~ 22
Author(s):
Han Zhao
◽
Davood Shahrjerdi
◽
Feng Zhu
◽
Hyoung-Sub Kim
◽
Injo OK
◽
...
Keyword(s):
Indium Phosphide
◽
Metal Oxide
◽
Field Effect
◽
Gate Dielectric
◽
Field Effect Transistors
◽
Oxide Thickness
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Equivalent Oxide Thickness
Download Full-text
Energy distribution of interface traps in germanium metal-oxide-semiconductor field effect transistors with HfO2 gate dielectric and its impact on mobility
Applied Physics Letters
◽
10.1063/1.2976632
◽
2008
◽
Vol 93
(8)
◽
pp. 083510
◽
Cited By ~ 9
Author(s):
Ruilong Xie
◽
Nan Wu
◽
Chen Shen
◽
Chunxiang Zhu
Keyword(s):
Metal Oxide
◽
Energy Distribution
◽
Field Effect
◽
Gate Dielectric
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Interface Traps
Download Full-text
Impact of Dynamic Stress on Reliability of Nanoscale n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with SiON Gate Dielectric Operating in a Complementary Metal–Oxide–Semiconductor Inverter at Elevated Temperature
Japanese Journal of Applied Physics
◽
10.7567/jjap.51.02bc13
◽
2012
◽
Vol 51
(2S)
◽
pp. 02BC13
Author(s):
Nam-Hyun Lee
◽
Hyung-wook Kim
◽
Bongkoo Kang
Keyword(s):
Elevated Temperature
◽
Metal Oxide
◽
Field Effect
◽
Dynamic Stress
◽
Gate Dielectric
◽
Field Effect Transistors
◽
Complementary Metal Oxide Semiconductor
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
Download Full-text
Steep Subthreshold Swing Metal-Oxide-Semiconductor Field-Effect Transistors Utilizing Nonlinear Gate Dielectric Insulators
10.7567/ssdm.2015.k-1-3
◽
2015
◽
Cited By ~ 1
Author(s):
H. Ota
◽
S. Migita
◽
K. Fukuda
◽
A. Toriumi
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Gate Dielectric
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Subthreshold Swing
◽
Oxide Semiconductor
Download Full-text
Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric
Applied Physics Letters
◽
10.1063/1.2937117
◽
2008
◽
Vol 92
(23)
◽
pp. 233508
◽
Cited By ~ 21
Author(s):
Han Zhao
◽
Davood Shahrjerdi
◽
Feng Zhu
◽
Manhong Zhang
◽
Hyoung-Sub Kim
◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Gate Dielectric
◽
Field Effect Transistors
◽
Atomic Layer
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Al2o3 Gate Dielectric
Download Full-text
Correlation between the 1∕f noise parameters and the effective low-field mobility in HfO2 gate dielectric n-channel metal–oxide–semiconductor field-effect transistors
Applied Physics Letters
◽
10.1063/1.1779967
◽
2004
◽
Vol 85
(6)
◽
pp. 1057-1059
◽
Cited By ~ 29
Author(s):
E. Simoen
◽
A. Mercha
◽
C. Claeys
◽
E. Young
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Gate Dielectric
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Noise Parameters
◽
Low Field
◽
Field Mobility
◽
Low Field Mobility
Download Full-text
Effects of a Gd capping layer on electrical characteristics of metal-oxide-semiconductor field effect transistors with a TaC gate electrode and a HfSiON gate dielectric
Applied Physics Letters
◽
10.1063/1.3264086
◽
2009
◽
Vol 95
(19)
◽
pp. 192113
◽
Cited By ~ 7
Author(s):
Hong Bae Park
◽
Chang Seo Park
◽
Chang Yong Kang
◽
Seung-Chul Song
◽
Byoung Hun Lee
◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Gate Dielectric
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Electrical Characteristics
◽
Gate Electrode
◽
Capping Layer
Download Full-text
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