Off‐state leakage currents in n‐channel metal‐oxide‐semiconductor field‐effect transistors with 10‐nm thermally nitrided and reoxidized nitrided oxides as the gate dielectric
Keyword(s):
2007 ◽
Vol 25
(3)
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pp. 1024
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Keyword(s):
2002 ◽
Vol 41
(Part 1, No. 7A)
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pp. 4432-4435
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