Effects of a Gd capping layer on electrical characteristics of metal-oxide-semiconductor field effect transistors with a TaC gate electrode and a HfSiON gate dielectric
2009 ◽
Vol 48
(5)
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pp. 05DC01
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Keyword(s):
2007 ◽
Vol 25
(3)
◽
pp. 1024
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Keyword(s):