Effects of a Gd capping layer on electrical characteristics of metal-oxide-semiconductor field effect transistors with a TaC gate electrode and a HfSiON gate dielectric

2009 ◽  
Vol 95 (19) ◽  
pp. 192113 ◽  
Author(s):  
Hong Bae Park ◽  
Chang Seo Park ◽  
Chang Yong Kang ◽  
Seung-Chul Song ◽  
Byoung Hun Lee ◽  
...  
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