Pulse Switching Property of Reset Process in Resistive Random Access Memory (ReRAM) Consisting of Binary-Transition-Metal-Oxides

2012 ◽  
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Pulse Switching ◽  
Switching Property

Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3

2011 ◽  
Vol 22 (25) ◽  
pp. 254029 ◽  
Author(s):  
Blanka Magyari-Köpe ◽  
Mihir Tendulkar ◽  
Seong-Geon Park ◽  
Hyung Dong Lee ◽  
Yoshio Nishi
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Resistive Switching ◽  
Transition Metal Oxides ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory

Extraction of Filament Properties in Resistive Random Access Memory (ReRAM) Consisting of Binary-Transition-Metal-Oxides

2014 ◽  
Vol 95 ◽  
pp. 84-90 ◽  
Author(s):  
Takumi Moriyama ◽  
Ryosuke Koishi ◽  
Kouhei Kimura ◽  
Satoru Kishida ◽  
Kentaro Kinoshita
Keyword(s):  
Resistive Switching ◽  
Transition Metal Oxides ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Clear Correlation ◽  
Value Of Time ◽  
Electrical Measurements ◽  
Access Memory ◽  
Time Required

Which parameter dominantly decides the value of time required to reset ReRAM (treset) among possible parameters, the value of a low resistance (RL), voltage to induce reset (Vreset), and temperature to induce reset (Treset)? Although to answer this question is important to achieve faster resistive switching, detailed correlations between the parameters are still unclear. In this paper, we extracted treset, Vreset, RL and Treset at the same time by combining two electrical measurements. As a result, we found a clear correlation between Vreset, RL, and Treset, meaning that each parameter can not be controlled independently. Tresetincreases not only with increasing Vresetbut also with increasing RL, which suggests the necessity of introducing ununiformly-shaped filamens and resistive switching takes place at the narrowing part of the filament.

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