Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy

2007 ◽  
Vol 90 (12) ◽  
pp. 122116 ◽  
Author(s):  
Derrick S. Kamber ◽  
Yuan Wu ◽  
Edward Letts ◽  
Steven P. DenBaars ◽  
James S. Speck ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Aluminum Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Lateral Epitaxial Overgrowth

Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

2003 ◽  
Vol 83 (4) ◽  
pp. 644-646 ◽  
Author(s):  
B. A. Haskell ◽  
F. Wu ◽  
M. D. Craven ◽  
S. Matsuda ◽  
P. T. Fini ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Defect Reduction ◽  
Lateral Epitaxial Overgrowth

Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy technology

2010 ◽  
Vol 36 (6) ◽  
pp. 496-499 ◽  
Author(s):  
V. N. Bessolov ◽  
Yu. V. Zhilyaev ◽  
E. V. Konenkova ◽  
L. M. Sorokin ◽  
N. A. Feoktistov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Aluminum Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy

Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy

2009 ◽  
Vol 94 (12) ◽  
pp. 121906 ◽  
Author(s):  
Scott A. Newman ◽  
Derrick S. Kamber ◽  
Troy J. Baker ◽  
Yuan Wu ◽  
Feng Wu ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Lateral Epitaxial Overgrowth

Aluminum nitride grown on lens shaped patterned sapphire by hydride vapor phase epitaxy

2011 ◽  
Vol 8 (5) ◽  
pp. 1463-1466 ◽  
Author(s):  
Benjamin N. Bryant ◽  
Derrick S. Kamber ◽  
Feng Wu ◽  
Shuji Nakamura ◽  
James S. Speck
Keyword(s):  
Aluminum Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy

2005 ◽  
Vol 86 (11) ◽  
pp. 111917 ◽  
Author(s):  
B. A. Haskell ◽  
T. J. Baker ◽  
M. B. McLaurin ◽  
F. Wu ◽  
P. T. Fini ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Defect Reduction ◽  
Lateral Epitaxial Overgrowth

Influence of growth temperature on intrinsic stress distribution in aluminum nitride grown by hydride vapor phase epitaxy

2016 ◽  
Vol 6 (4) ◽  
pp. 367-370 ◽  
Author(s):  
Xue-Hua Liu ◽  
Ji-Cai Zhang ◽  
Jun Huang ◽  
Ming-Ming Yang ◽  
Xu-Jun Su ◽  
...  
Keyword(s):  
Stress Distribution ◽  
Aluminum Nitride ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Intrinsic Stress

Effects of the V/III ratio on the quality of aluminum nitride grown on (0001) sapphire by high temperature hydride vapor phase epitaxy

2013 ◽  
Vol 10 (3) ◽  
pp. 362-365 ◽  
Author(s):  
N. Coudurier ◽  
R. Boichot ◽  
V. Fellmann ◽  
A. Claudel ◽  
E. Blanquet ◽  
...  
Keyword(s):  
High Temperature ◽  
Aluminum Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Growth of GaN Nanorods by a Hydride Vapor Phase Epitaxy Method

2002 ◽  
Vol 14 (13-14) ◽  
pp. 991-993 ◽  
Author(s):  
H.-M. Kim ◽  
D.S. Kim ◽  
Y.S. Park ◽  
D.Y. Kim ◽  
T.W. Kang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy
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