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Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2O3 gate dielectric
Applied Physics Letters
◽
10.1063/1.2764438
◽
2007
◽
Vol 91
(6)
◽
pp. 063501
◽
Cited By ~ 107
Author(s):
Davood Shahrjerdi
◽
Emanuel Tutuc
◽
Sanjay K. Banerjee
Keyword(s):
Metal Oxide
◽
Chemical Treatment
◽
Gate Dielectric
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Surface Chemical
◽
Capacitance Voltage
◽
Al2o3 Gate Dielectric
Download Full-text
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Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric
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◽
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◽
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◽
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Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric
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◽
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◽
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◽
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◽
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◽
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◽
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◽
Atomic Layer
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Enhancement Mode
◽
Capacitance Voltage
◽
Effect Transistor
◽
Al2o3 Gate Dielectric
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Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with Al2O3 gate dielectric
Applied Physics Letters
◽
10.1063/1.2931708
◽
2008
◽
Vol 92
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◽
pp. 203505
◽
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Author(s):
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...
Keyword(s):
Metal Oxide
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Field Effect
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Field Effect Transistor
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Gate Dielectric
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Metal Oxide Semiconductor
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Oxide Semiconductor
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Enhancement Mode
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Effect Transistor
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InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric
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Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited Al2O3 gate dielectric
Applied Physics Letters
◽
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◽
2006
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◽
pp. 132103
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Cited By ~ 18
Author(s):
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Keyword(s):
Metal Oxide
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Gate Dielectric
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Minority Carrier
◽
Atomic Layer
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Metal Oxide Semiconductor
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InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric
ECS Transactions
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◽
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◽
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Author(s):
Chia-Yuan Chang
◽
Edward Yi Chang
◽
Wei-Ching Huang
◽
Yung-Hsuan Su
◽
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◽
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Metal Oxide
◽
Gate Dielectric
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Atomic Layer
◽
Metal Oxide Semiconductor
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Physical and electrical characterizations of metal-oxide-semiconductor capacitors fabricated on GaAs substrates with different surface chemical treatments and Al[sub 2]O[sub 3] gate dielectric
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
◽
10.1116/1.3256229
◽
2009
◽
Vol 27
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◽
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Domingo I. Garcia-Gutierrez
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Metal Oxide
◽
Gate Dielectric
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Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Surface Chemical
◽
Chemical Treatments
◽
Gaas Substrates
◽
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Damage effect of hafnium oxide gate dielectric based metal–oxide–semiconductor structure under gamma-ray irradiation
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Vol 11
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pp. 065304
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Hafnium Oxide
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Gamma Ray
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Gate Dielectric
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Metal Oxide Semiconductor
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Semiconductor Structure
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Damage Effect
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Gamma Ray Irradiation
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High Performance β-Ga2O3 Solar-Blind Metal–Oxide–Semiconductor Field-Effect Phototransistor With Hafnium Oxide Gate Dielectric Process
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Hafnium Oxide
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Field Effect
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High Performance
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Gate Dielectric
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Metal Oxide Semiconductor
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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric
Journal of Applied Physics
◽
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◽
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◽
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Gate Dielectric
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Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Electrical Characteristics
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