scholarly journals Ultrasmooth Organic Films Via Efficient Aggregation Suppression by a Low-Vacuum Physical Vapor Deposition

Materials ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 7247
Author(s):  
Youngkwan Yoon ◽  
Jinho Lee ◽  
Seulgi Lee ◽  
Soyoung Kim ◽  
Hee Cheul Choi

Organic thin films with smooth surfaces are mandated for high-performance organic electronic devices. Abrupt nucleation and aggregation during film formation are two main factors that forbid smooth surfaces. Here, we report a simple fast cooling (FC) adapted physical vapor deposition (FCPVD) method to produce ultrasmooth organic thin films through effectively suppressing the aggregation of adsorbed molecules. We have found that thermal energy control is essential for the spread of molecules on a substrate by diffusion and it prohibits the unwanted nucleation of adsorbed molecules. FCPVD is employed for cooling the horizontal tube-type organic vapor deposition setup to effectively remove thermal energy applied to adsorbed molecules on a substrate. The organic thin films prepared using the FCPVD method have remarkably ultrasmooth surfaces with less than 0.4 nm root mean square (RMS) roughness on various substrates, even in a low vacuum, which is highly comparable to the ones prepared using conventional high-vacuum deposition methods. Our results provide a deeper understanding of the role of thermal energy employed to substrates during organic film growth using the PVD process and pave the way for cost-effective and high-performance organic devices.

2008 ◽  
Author(s):  
Kh. S. Karimov ◽  
S. Bellingeri ◽  
B. F. Irgaziev ◽  
I. Qazi ◽  
T. A. Khan ◽  
...  

RSC Advances ◽  
2016 ◽  
Vol 6 (56) ◽  
pp. 50770-50775 ◽  
Author(s):  
Tianjun Liu ◽  
Jiawei Wang ◽  
Liang Wang ◽  
Jing Wang ◽  
Jingbo Lan ◽  
...  

We report the observation of a screw-dislocation-driven spiral growth of DMDPC organic thin films. The existence of screw dislocations was clearly confirmed by the observations of outcropped stepsand spiral fringes.


2017 ◽  
Vol 21 (11) ◽  
pp. 739-744
Author(s):  
Felix Küster ◽  
Marco Grünewald ◽  
Mitsuo Ikeda ◽  
Noriaki Hanasaki ◽  
Torsten Fritz

We tested the feasibility of in-house synthesized M(Pc)(CN)[Formula: see text] type axially substituted metal-phthalocyanines (M [Formula: see text] metal ion Co or Fe; Pc [Formula: see text] phthalocyanine ligand) for thin film growth via physical vapor deposition. We performed optical and infrared spectroscopy on thin films deposited in high vacuum as well as thermal desorption experiments in ultrahigh vacuum using mass spectrometry. In contradiction to the expectation of a rather strongly bound CN ligand, the results indicate molecular dissociation under the loss of CN groups at a temperature that is below the evaporation temperature of the material needed to form a film on a substrate. Therefore it was concluded that PVD is not a suitable method to grow M(Pc)(CN)[Formula: see text] thin films. However, the obtained data yield valuable insight into the molecules’ stability.


1990 ◽  
Vol 202 ◽  
Author(s):  
C.M. Cotell ◽  
J.A. Sprague ◽  
C.R. Gossett

ABSTRACTThin films of Ag were grown on amorphous C and <111= Si substrates with simultaneous Ar+ bombardment at energies ranging from 50–40,000 eV. For deposition of Ag on amorphous C, ion beam bombardment induced no changes in film nucleation behavior relative to evaporation (henceforth referred to as physical vapor deposition, PVD). Film growth was affected at the highest energy (40 keV); the grain size of the Ag films was increased by a factor of three. Rutherford Backscattering (RBS) measurements on Ag films on <111=Si bombarded with Ar+ at 1.5 keV showed that the Ag sputtering yield at film thicknesses <1.5 nm was less than for bulk Ag, in agreement with TRIM calculations. At 40 keV there was evidence for an additional effect of the ion beam due to recoil implantation or ion mixing. Electron diffraction from Ag fdms grown on <111= Si substrates with simultaneous Ar+ bombardment at either 1.5 keV or 40 keV showed evidence for only the expected phases: single crystal Si, polycrystalline Ag, and an amorphous phase that likely resulted from ion damage to the substrate.


2018 ◽  
Vol 2 (1) ◽  
pp. 586-597 ◽  
Author(s):  
Tianxing Ma ◽  
Michael P. Nitzsche ◽  
Arielle R. Gamboa ◽  
Valeria Saro-Cortes ◽  
Jonathan P. Singer

1991 ◽  
Vol 6 (9) ◽  
pp. 1913-1918 ◽  
Author(s):  
Jiong-Ping Lu ◽  
Rishi Raj

Chemical vapor deposition (CVD) of titanium oxide films has been performed for the first time under ultra-high vacuum (UHV) conditions. The films were deposited through the pyrolysis reaction of titanium isopropoxide, Ti(OPri)4, and in situ characterized by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). A small amount of C incorporation was observed during the initial stages of deposition, through the interaction of precursor molecules with the bare Si substrate. Subsequent deposition produces pure and stoichiometric TiO2 films. Si–O bond formation was detected in the film-substrate interface. Deposition rate was found to increase with the substrate temperature. Ultra-high vacuum chemical vapor deposition (UHV-CVD) is especially useful to study the initial stages of the CVD processes, to prepare ultra-thin films, and to investigate the composition of deposited films without the interference from ambient impurities.


2012 ◽  
Vol 177 (1) ◽  
pp. 117-120 ◽  
Author(s):  
J.Q. Xu ◽  
T. Mori ◽  
Y. Bando ◽  
D. Golberg ◽  
D. Berthebaud ◽  
...  

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