Near-field optical characterization of surface-plasmon-mediated light emission from electrically biased metal-insulator-semiconductor tunnel junctions

Applied Physics Letters ◽

10.1063/1.2898201 ◽

2008 ◽

Vol 92 (10) ◽

pp. 103123 ◽

Author(s):

J. Seidel ◽

T. Göhler ◽

S. Grafström ◽

L. M. Eng

Keyword(s):

Surface Plasmon ◽

Light Emission ◽

Tunnel Junctions ◽

Optical Characterization ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Optical Characterization of Near-Field Sprays for Various Alternative and Conventional Jet Fuels Using a Flow-Blurring Injector

Flow Turbulence and Combustion ◽

10.1007/s10494-021-00276-9 ◽

2021 ◽

Author(s):

Imtiaz Qavi ◽

Lulin Jiang

Keyword(s):

Optical Characterization ◽

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Characterization of interface electrical properties in SiO2/InSb metal/insulator/semiconductor structures prepared by plasma-enhanced chemical vapour deposition

Thin Solid Films ◽

10.1016/0040-6090(87)90317-8 ◽

1987 ◽

Vol 148 (3) ◽

pp. 243-250 ◽

Author(s):

K.G. Germanova ◽

E.P. Valcheva

Keyword(s):

Electrical Properties ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Electrical & Physical Characterization of Silicon-Organic Asymmetrical Metal Insulator Semiconductor Capacitive Test Structure

Silicon ◽

10.1007/s12633-020-00939-8 ◽

2021 ◽

Author(s):

Rajesh Agarwal

Keyword(s):

Test Structure ◽

Physical Characterization ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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The effect of metal work function on current conduction in metal‐insulator‐semiconductor tunnel junctions

Journal of Applied Physics ◽

10.1063/1.334761 ◽

1985 ◽

Vol 57 (2) ◽

pp. 373-376 ◽

Author(s):

D. S. Camporese ◽

D. L. Pulfrey

Keyword(s):

Work Function ◽

Tunnel Junctions ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Metal Work Function ◽

Current Conduction ◽

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Fabrication and characterization of metal/insulator/semiconductor structures based on TiO2 and TiO2/SiO2 thin films prepared by low-temperature arc vapor deposition

Electronic Materials Letters ◽

10.1007/s13391-013-3244-6 ◽

2014 ◽

Vol 10 (3) ◽

pp. 579-584 ◽

Author(s):

Kumar Shubham ◽

P. Chakrabarti

Keyword(s):

Low Temperature ◽

Vapor Deposition ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Fabrication And Characterization

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Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies

Journal of Applied Physics ◽

10.1063/1.4808093 ◽

2013 ◽

Vol 113 (20) ◽

pp. 204505 ◽

Author(s):

Christine M. Jackson ◽

Aaron R. Arehart ◽

Emre Cinkilic ◽

Brian McSkimming ◽

James S. Speck ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Interface Trap ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Layer Deposition

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Structural and optical characterization of Eu and Dy doped CaWO4 nanoparticles for white light emission

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2020.154804 ◽

2020 ◽

Vol 834 ◽

pp. 154804 ◽

Author(s):

Puneet Kaur ◽

Atul Khanna ◽

M.N. Singh ◽

A.K. Sinha

Keyword(s):

White Light ◽

Light Emission ◽

Optical Characterization ◽

White Light Emission

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An investigation on the light-emission mechanism of metal-insulator-semiconductor light-emitting diodes with different SiGe quantum well structures

2011 International Semiconductor Device Research Symposium (ISDRS) ◽

10.1109/isdrs.2011.6135345 ◽

2011 ◽

Author(s):

M. H. Liao ◽

L. C. Chang

Keyword(s):

Quantum Well ◽

Light Emitting Diodes ◽

Light Emission ◽

Emission Mechanism ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Light Emitting ◽

Quantum Well Structures

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ELECTRON LOCAL‐MODE PHONON INTERACTION IN METAL‐INSULATOR‐SEMICONDUCTOR TUNNEL JUNCTIONS

Applied Physics Letters ◽

10.1063/1.1653381 ◽

1970 ◽

Vol 17 (6) ◽

pp. 236-239 ◽

Author(s):

L. B. Schein ◽

W. Dale Compton

Keyword(s):

Tunnel Junctions ◽

Phonon Interaction ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Characterization of metal–ferroelectric–metal–insulator–semiconductor structures using ferroelectric Al-doped HfO2 thin films prepared by atomic-layer deposition with different O3 doses

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab2c62 ◽

2019 ◽

Vol 58 (7) ◽

pp. 070907 ◽

Author(s):

So-Yeong Na ◽

So-Jung Yoon ◽

Seung-Youl Kang ◽

Seung-Eon Moon ◽

Sung-Min Yoon

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Layer Deposition

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