Fabrication and characterization of metal/insulator/semiconductor structures based on TiO2 and TiO2/SiO2 thin films prepared by low-temperature arc vapor deposition

Electronic Materials Letters ◽

10.1007/s13391-013-3244-6 ◽

2014 ◽

Vol 10 (3) ◽

pp. 579-584 ◽

Author(s):

Kumar Shubham ◽

P. Chakrabarti

Keyword(s):

Low Temperature ◽

Vapor Deposition ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Fabrication And Characterization

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Characterization of metal–ferroelectric–metal–insulator–semiconductor structures using ferroelectric Al-doped HfO2 thin films prepared by atomic-layer deposition with different O3 doses

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab2c62 ◽

2019 ◽

Vol 58 (7) ◽

pp. 070907 ◽

Author(s):

So-Yeong Na ◽

So-Jung Yoon ◽

Seung-Youl Kang ◽

Seung-Eon Moon ◽

Sung-Min Yoon

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Layer Deposition

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Fabrication and characterization of metal-insulator-semiconductor structures by direct nitridation of InP surfaces

Applied Physics Letters ◽

10.1063/1.3269906 ◽

2010 ◽

Vol 96 (1) ◽

pp. 012107 ◽

Author(s):

T. Haimoto ◽

T. Hoshii ◽

S. Nakagawa ◽

M. Takenaka ◽

S. Takagi

Keyword(s):

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Fabrication And Characterization ◽

Direct Nitridation

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Characterization of interface electrical properties in SiO2/InSb metal/insulator/semiconductor structures prepared by plasma-enhanced chemical vapour deposition

Thin Solid Films ◽

10.1016/0040-6090(87)90317-8 ◽

1987 ◽

Vol 148 (3) ◽

pp. 243-250 ◽

Author(s):

K.G. Germanova ◽

E.P. Valcheva

Keyword(s):

Electrical Properties ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Gate quality Si3N4 prepared by low temperature remote plasma enhanced chemical vapor deposition for III–V semiconductor-based metal–insulator–semiconductor devices

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589003 ◽

1996 ◽

Vol 14 (4) ◽

pp. 2674 ◽

Author(s):

D. G. Park

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Semiconductor Devices ◽

Chemical Vapor ◽

Remote Plasma ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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The Low Temperature Catalyzed Chemical Vapor Deposition and Characterization of Silicon Nitride Thin Films

Journal of The Electrochemical Society ◽

10.1149/1.2069356 ◽

1992 ◽

Vol 139 (4) ◽

pp. 1151-1159 ◽

Author(s):

Jeffrey L. Dupuie ◽

Erdogan Gulari ◽

Fred Terry

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Low Temperature ◽

Vapor Deposition ◽

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Preparation and characterization of thin films of copper(II) oxide by low temperature normal pressure metalorganic chemical vapor deposition

Materials Research Bulletin ◽

10.1016/0025-5408(89)90128-1 ◽

1989 ◽

Vol 24 (2) ◽

pp. 213-219 ◽

Author(s):

Angus B. Laurie ◽

Michael L. Norton

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Normal Pressure ◽

Metalorganic Chemical

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Measurement and characterization of interface state tunneling in metal-insulator-semiconductor structures

Solid-State Electronics ◽

10.1016/0038-1101(86)90140-1 ◽

1986 ◽

Vol 29 (6) ◽

pp. 597-606 ◽

Author(s):

Sanjay Jain ◽

Walter E. Dahlke

Keyword(s):

Interface State ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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The low temperature catalyzed chemical vapor deposition and characterization of aluminum nitride thin films

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.578135 ◽

1992 ◽

Vol 10 (1) ◽

pp. 18-28 ◽

Author(s):

Jeffrey L. Dupuie ◽

Erdogan Gulari

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Aluminum Nitride ◽

Vapor Deposition ◽

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Characterization of a-Si:H based metal/insulator/semiconductor structures by feedback charge capacitance-voltage measurements and charge deep-level transient spectroscopy

Journal of Applied Physics ◽

10.1063/1.366247 ◽

1997 ◽

Vol 82 (9) ◽

pp. 4372-4377 ◽

Author(s):

I. Thurzo ◽

S. Teramura ◽

R. Durny ◽

V. Nádaždy ◽

M. Kumeda ◽

...

Keyword(s):

Deep Level Transient Spectroscopy ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage ◽

Transient Spectroscopy ◽

Charge Capacitance

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Fabrication and characterization of BN/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors with sputtering-deposited BN gate dielectric

physica status solidi (c) ◽

10.1002/pssc.201300290 ◽

2013 ◽

Vol 10 (11) ◽

pp. 1401-1404 ◽

Author(s):

Tuan Quy Nguyen ◽

Hong-An Shih ◽

Masahiro Kudo ◽

Toshi-kazu Suzuki

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Fabrication And Characterization ◽

Heterojunction Field Effect Transistors

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