Characterization of metal–ferroelectric–metal–insulator–semiconductor structures using ferroelectric Al-doped HfO2 thin films prepared by atomic-layer deposition with different O3 doses

2019 ◽  
Vol 58 (7) ◽  
pp. 070907 ◽  
Author(s):  
So-Yeong Na ◽  
So-Jung Yoon ◽  
Seung-Youl Kang ◽  
Seung-Eon Moon ◽  
Sung-Min Yoon
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures ◽  
Layer Deposition

scholarly journals Tuning electronic properties in LaNiO3 thin films by B-site Cu-substitution

2020 ◽  
Vol 8 (36) ◽  
pp. 12662-12668
Author(s):  
Henrik H. Sønsteby ◽  
Erik Skaar ◽  
Jon E. Bratvold ◽  
John W. Freeland ◽  
Angel Yanguas-Gil ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Electronic Properties ◽  
Room Temperature ◽  
Atomic Layer ◽  
Transition Temperatures ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Cu Substitution ◽  
Layer Deposition

Cu-Substitution in LaNiO3 by atomic layer deposition provides films spanning six orders of magnitude in resistivity, with metal insulator transition temperatures from 0 K to room temperature.

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