Fabrication of gate stack with high gate work function for implantless enhancement-mode GaAs n-channel metal-oxide-semiconductor field effect transistor applications

Oxide Semiconductor ◽

Gate Stack ◽

Enhancement Mode ◽

Effect Transistor ◽

Gate Work Function

Hot Carrier Relief of Metal Oxide Semiconductor Field Effect Transistor by Using Work-Function Engineering

Japanese Journal of Applied Physics ◽

10.1143/jjap.29.l2286 ◽

1990 ◽

Vol 29 (Part 2, No. 12) ◽

pp. L2286-L2288 ◽

Cited By ~ 4

Author(s):

Udo Schwalke ◽

Wilfried Hänsch ◽

Arnulf Lill

Keyword(s):

Metal Oxide ◽

Work Function ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Work function thermal stability of RuO2-rich Ru–Si–O p-channel metal-oxide-semiconductor field-effect transistor gate electrodes

Journal of Applied Physics ◽

10.1063/1.2901016 ◽

2008 ◽

Vol 103 (7) ◽

pp. 073702 ◽

Cited By ~ 4

Author(s):

M. Ťapajna ◽

A. Rosová ◽

E. Dobročka ◽

V. Štrbík ◽

Š. Gaži ◽

...

Keyword(s):

Thermal Stability ◽

Metal Oxide ◽

Work Function ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Gate Electrodes ◽

Effect Transistor ◽

Thermal Stability Of

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain

10.1116/1.3025909 ◽

2009 ◽

Vol 27 (1) ◽

pp. 214 ◽

Cited By ~ 11

Author(s):

Fei Gao ◽

S. J. Lee ◽

D. L. Kwong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Surface Passivation ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Enhancement Mode ◽

Study on Thermal Stability of Plasma-PH[sub 3] Passivated HfAlO/In[sub 0.53]Ga[sub 0.47]As Gate Stack for Advanced Metal-Oxide-Semiconductor Field Effect Transistor

Electrochemical and Solid-State Letters ◽

10.1149/1.3465300 ◽

2010 ◽

Vol 13 (10) ◽

pp. H336 ◽

Cited By ~ 6

Author(s):

Sumarlina Azzah Suleiman ◽

H. J. Oh ◽

A. Du ◽

C. M. Ng ◽

S. J. Lee

Keyword(s):

Thermal Stability ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Effect Transistor ◽

Thermal Stability Of

Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with Al2O3 gate dielectric

Applied Physics Letters ◽

10.1063/1.2931708 ◽

2008 ◽

Vol 92 (20) ◽

pp. 203505 ◽

Cited By ~ 27

Author(s):

D. Shahrjerdi ◽

T. Akyol ◽

M. Ramon ◽

D. I. Garcia-Gutierrez ◽

E. Tutuc ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

Enhancement Mode ◽

Effect Transistor ◽

Al2o3 Gate Dielectric

Analytical Threshold Model for Nanoscale Cylindrical Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistor with High-κ Gate Dielectric and Tri-Material Gate Stack

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.124202 ◽

2010 ◽

Vol 49 (12) ◽

pp. 124202 ◽

Cited By ~ 6

Author(s):

Cong Li ◽

Yi-Qi Zhuang ◽

Ru Han

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Threshold Model ◽

Oxide Semiconductor ◽

Gate Stack ◽

Surrounding Gate ◽

Enhancement‐Mode β ‐Ga 2 O 3 Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.201900586 ◽

2019 ◽

Vol 14 (3) ◽

pp. 1900586 ◽

Cited By ~ 2

Author(s):

Yuanjie Lv ◽

Xingye Zhou ◽

Shibing Long ◽

Yuangang Wang ◽

Xubo Song ◽

...

Keyword(s):

Metal Oxide ◽

Breakdown Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Oxygen Annealing ◽

Enhancement Mode ◽

High Breakdown Voltage ◽

Effects of high temperature forming gas anneal on the characteristics of metal-oxide-semiconductor field-effect transistor with HfO2 gate stack

Applied Physics Letters ◽

10.1063/1.1755412 ◽

2004 ◽

Vol 84 (24) ◽

pp. 4839-4841 ◽

Cited By ~ 17

Author(s):

Rino Choi ◽

Chang Seok Kang ◽

Hag-Ju Cho ◽

Young-Hee Kim ◽

Mohammad S. Akbar ◽

...

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Mechanism of mobility enhancement in Ge p-channel metal-oxide-semiconductor field-effect transistor due to introduction of Al atoms into SiO 2 /GeO 2 gate stack

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2016.11.014 ◽

2017 ◽

Vol 70 ◽

pp. 246-253 ◽

Cited By ~ 3

Author(s):

Yuta Nagatomi ◽

Tomoki Tateyama ◽

Shintaro Tanaka ◽

Wei-Chen Wen ◽

Taisei Sakaguchi ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Sub-30-nm Complementary Metal–Oxide–Semiconductor Field-Effect Transistor with Pt-Incorporated Fully Ni-Silicide/SiON Gate Stack

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04dc16 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DC16

Author(s):

Hidenobu Fukutome ◽

Kazuya Okubo ◽

Sinichi Akiyama ◽

Naoki Idani ◽

Hiroyuki Ohta ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Complementary Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽