Analytical Threshold Model for Nanoscale Cylindrical Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistor with High-κ Gate Dielectric and Tri-Material Gate Stack

Oxide Semiconductor ◽

Gate Stack ◽

Surrounding Gate ◽

Correlations between structural and electrical properties of nitrided SiOx thin films used as power metal oxide semiconductor field effect transistor gate dielectric

10.1063/1.3021404 ◽

2008 ◽

Vol 93 (18) ◽

pp. 182109

Author(s):

E. Fazio ◽

F. Neri ◽

G. Curró M. Camalleri ◽

D. Calí

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

Structural And Electrical Properties ◽

Analytical modeling of a split-gate dielectric modulated metal-oxide-semiconductor field-effect transistor for application as a biosensor

2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) ◽

10.1109/icdcsyst.2014.6926183 ◽

2014 ◽

Cited By ~ 3

Author(s):

Ajay ◽

Rakhi Narang ◽

Manoj Saxena ◽

Mridula Gupta

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

Inversion-Mode Self-Aligned $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With HfAlO Gate Dielectric and TaN Metal Gate

IEEE Electron Device Letters ◽

10.1109/led.2008.2001766 ◽

2008 ◽

Vol 29 (9) ◽

pp. 977-980 ◽

Cited By ~ 30

Author(s):

J. Q. Lin ◽

S. J. Lee ◽

H. J. Oh ◽

G. Q. Lo ◽

D. L. Kwong ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

Metal Gate ◽

Inversion Mode ◽

Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectric

10.1063/1.3614446 ◽

2011 ◽

Vol 99 (3) ◽

pp. 033502 ◽

Cited By ~ 12

Author(s):

J. H. Yum ◽

T. Akyol ◽

M. Lei ◽

D. A. Ferrer ◽

Todd. W. Hudnall ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Atomic Layer ◽

Oxide Semiconductor ◽

Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric

10.1063/1.2969282 ◽

2008 ◽

Vol 93 (5) ◽

pp. 053504 ◽

Cited By ~ 48

Author(s):

Y. C. Chang ◽

W. H. Chang ◽

H. C. Chiu ◽

L. T. Tung ◽

C. H. Lee ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Atomic Layer ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3(Gd2O3) as the gate dielectric

10.1116/1.3565057 ◽

2011 ◽

Vol 29 (3) ◽

pp. 03C122 ◽

Cited By ~ 4

Author(s):

W. H. Chang ◽

T. H. Chiang ◽

Y. D. Wu ◽

M. Hong ◽

C. A. Lin ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Study on Thermal Stability of Plasma-PH[sub 3] Passivated HfAlO/In[sub 0.53]Ga[sub 0.47]As Gate Stack for Advanced Metal-Oxide-Semiconductor Field Effect Transistor

Electrochemical and Solid-State Letters ◽

10.1149/1.3465300 ◽

2010 ◽

Vol 13 (10) ◽

pp. H336 ◽

Cited By ~ 6

Author(s):

Sumarlina Azzah Suleiman ◽

H. J. Oh ◽

A. Du ◽

C. M. Ng ◽

S. J. Lee

Keyword(s):

Thermal Stability ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Effect Transistor ◽

Thermal Stability Of

Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with Al2O3 gate dielectric

10.1063/1.2931708 ◽

2008 ◽

Vol 92 (20) ◽

pp. 203505 ◽

Cited By ~ 27

Author(s):

D. Shahrjerdi ◽

T. Akyol ◽

M. Ramon ◽

D. I. Garcia-Gutierrez ◽

E. Tutuc ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

Enhancement Mode ◽

Effect Transistor ◽

Al2o3 Gate Dielectric

Improved Explicit Current–Voltage Model for Long-Channel Undoped Surrounding-Gate Metal Oxide Semiconductor Field Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c035 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C035 ◽

Cited By ~ 5

Author(s):

Aeri Son ◽

Jihyun Kim ◽

Narae Jeong ◽

Jaehoon Choi ◽

Hyungsoon Shin

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Current Voltage ◽

Surrounding Gate ◽

Effect Transistor ◽

Long Channel

Improvement on Fluorine Effect under High Field Stress in Tungsten-Polycide Gated Metal-Oxide-Semiconductor Field-Effect Transistor with Oxynitride and/or Reoxidized-Oxynitride Gate Dielectric

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.2590 ◽

1996 ◽

Vol 35 (Part 1, No. 5A) ◽

pp. 2590-2594 ◽

Cited By ~ 10

Author(s):

Chii-Wen Chen ◽

Yean-Kuen Fang ◽

Kan-Yuan Lee ◽

Jang-Cheng Hsieh ◽

Mong-Song Liang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Field ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

Field Stress ◽