Ultrathin SiO2 layer with an extremely low leakage current density formed in high concentration nitric acid

2009 ◽  
Vol 105 (10) ◽  
pp. 103709 ◽  
Author(s):  
Woo-Byoung Kim ◽  
Taketoshi Matsumoto ◽  
Hikaru Kobayashi
Keyword(s):  
Nitric Acid ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Sio2 Layer ◽  
High Concentration ◽  
Low Leakage ◽  
Low Leakage Current

Ultra-Thin Sputtered Pzt Films for Ulsi Drams

1993 ◽  
Vol 310 ◽  
Author(s):  
Jiyoung Kim ◽  
C. Sudhama ◽  
Rajesh Khamankar ◽  
Jack Lee
Keyword(s):  
High Temperature ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Perovskite Phase ◽  
Storage Capacitor ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Pzt Thin Film ◽  
Pzt Films

AbstractIn this work, a high-temperature deposition technique has been developed for ultra-thin sputtered PZT films for ULSI DRAM (<256Mb) storage capacitor applications. In contrast to the previously developed low-temperature (200°C) deposition, deposition at high-temperature (400°C) yields a desirable reduction in grain size of the perovskite phase. The thickness of PZT films has been reduced to less than 30nm with high charge storage density (∼30μC/cm2) and low leakage current density. An optimized 65nm PZT thin film was found to have an equivalent SiO2 thickness of 1.9Å and a leakage current density of less than 10−6 A/cm2 under 2V operation.

The Low Leakage Current Density of MIS with SiO2 Film Made by ICP-CVD

2019 ◽  
Vol 2 (1) ◽  
pp. 261-266
Author(s):  
Rosa María Luna-Sánchez ◽  
Ignacio González-Martínez
Keyword(s):  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Sio2 Film ◽  
Low Leakage ◽  
Low Leakage Current
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