Linearly polarized light emission from InGaN light emitting diode with subwavelength metallic nanograting

2009 ◽  
Vol 95 (26) ◽  
pp. 261110 ◽  
Author(s):  
Liang Zhang ◽  
Jing Hua Teng ◽  
Soo Jin Chua ◽  
Eugene A. Fitzgerald
2016 ◽  
Vol 10 (1) ◽  
pp. 012101 ◽  
Author(s):  
Linghua Chen ◽  
Miao Wang ◽  
Bing Cao ◽  
Shengming Zhou ◽  
Yu Lin ◽  
...  

2013 ◽  
Vol 211 (3) ◽  
pp. 651-655 ◽  
Author(s):  
Jorge Oliva ◽  
Elder De la Rosa ◽  
Luis Diaz-Torres ◽  
Anvar Zakhidov

2014 ◽  
Vol 93 ◽  
pp. 264-269 ◽  
Author(s):  
Henryk Teisseyre ◽  
Michal Bockowski ◽  
Toby David Young ◽  
Szymon Grzanka ◽  
Yaroslav Zhydachevskii ◽  
...  

In this communication, the use of gallium nitride doped with beryllium as an efficient converter for white light emitting diode is proposed. Until now beryllium in this material was mostly studied as a potential p-type dopant. Unfortunately, the realization of p-type conductivity in such a way seems impossible. However, due to a very intensive yellow emission, bulk crystals doped with beryllium can be used as light converters. In this communication, it is demonstrated that realisation of such diode is possible and realisation of a colour rendering index is close to that necessary for white light emission.


Author(s):  
So Yoon Kwon ◽  
Ki-Cheol Yoon ◽  
Kwang Gi Kim

Abstract Inside the brain tumor, the blood vessels are intricately composed, and the tumors and blood vessels are similar in color. Therefore, when observing tumors and blood vessels with the naked eye or a surgical microscope, it is difficult to distinguish between tumors and blood vessels. Fluorescence staining with indocyanine green (ICG) is performed to distinguish between brain tumors and blood vessels using a surgical microscope. However, when observing the blood circulation state of a tumor or blood vessel through a surgical microscope, light reflection occurs from the camera. In the process of observing the state of the blood vessel, due to the occurrence of light reflection, an obstruction phenomenon in which the observation field is blocked by the blood vessel of the object to be observed occurs. Therefore, it is difficult to diagnose the vascular condition. In this experiment, the 780nm light-emitting diode (LED) was irradiated to the ICG phantom, and then, when the fluorescence expression image was observed, the polarizing filter such as circular polarized light (CPL) filter and linear polarized light (LPL) filter were inserted into the camera and the reflected light was reduced. Therefore, it is possible to reduce the reflected light from the fluorescence expression image by using a polarizing filter, and it is expected to be applicable to surgery and diagnostic fields of cancer such as surgery.


2007 ◽  
Vol 121-123 ◽  
pp. 557-560 ◽  
Author(s):  
J. Xu ◽  
Katsunori Makihara ◽  
Hidenori Deki ◽  
Yoshihiro Kawaguchi ◽  
Hideki Murakami ◽  
...  

Light emitting diode with MOS structures containing multiple-stacked Si quantum dots (QDs)/SiO2 was fabricated and the visible-infrared light emission was observed a room temperature when the negative gate bias exceeded the threshold voltage. The luminescence intensity was increased linearly with increasing the injected current density. The possible luminescence mechanism was briefly discussed and the delta P doping was performed to obtain the doped Si QDs and the improvement of EL intensity was demonstrated.


2015 ◽  
Vol 15 (10) ◽  
pp. 7733-7737 ◽  
Author(s):  
Kwanjae Lee ◽  
Cheul-Ro Lee ◽  
Jin Soo Kim ◽  
Jin Hong Lee ◽  
Kee Young Lim ◽  
...  

We report the influences of a Si-doped graded superlattice (SiGSL) on the electrostatic discharge (ESD) characteristics of an InGaN/GaN light-emitting diode (LED). For comparison, a conventional InGaN/GaN LED (C-LED) was also investigated. The luminous efficacy for the SiGSL-LED was 2.68 times stronger than that for the C-LED at the injection current of 20 mA. The resistances estimated from current–voltage (I–V) characteristic curves were 16.5 and 8.8 Ω for the C-LED and SiGSL-LED, respectively. After the ESD treatment at the voltages of 4000 and 6000 V, there was no significant change in the I–V curves for the SiGSL-LED. Also, there was small variation in the I–V characteristics for the SiGSL-LED at the ESD voltage of 8000 V. However, the I–V curves for the C-LED were drastically degraded with increasing ESD voltage. While the light emission was not observed at the injection current of 20 mA from the C-LED sample after the ESD treatment, the emission spectra for the SiGSL-LED sample were clearly measured with the output powers of 10.47, 9.66, and 7.27 mW for the ESD voltages of 4000, 6000, and 8000 V respectively.


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