A simple analysis of inert marker motion in a single compound layer for solid‐phase epitaxy and for binary diffusion couples

1982 ◽  
Vol 53 (12) ◽  
pp. 8759-8764 ◽  
Author(s):  
U. Gösele ◽  
K. N. Tu ◽  
R. D. Thompson
Keyword(s):  
Solid Phase ◽  
Compound Layer ◽  
Solid Phase Epitaxy ◽  
Diffusion Couples ◽  
Simple Analysis ◽  
Binary Diffusion ◽  
Single Compound

Self-similar growth of a compound layer in thin-film binary diffusion couples

2000 ◽  
Vol 48 (6) ◽  
pp. 1371-1381 ◽  
Author(s):  
Huifang Zhang ◽  
Harris Wong
Keyword(s):  
Thin Film ◽  
Compound Layer ◽  
Diffusion Couples ◽  
Binary Diffusion ◽  
Self Similar ◽  
Similar Growth

Assessment of GaAs heteroepitaxial films grown on silicon‐on‐sapphire upgraded by double solid phase epitaxy

1989 ◽  
Vol 55 (17) ◽  
pp. 1756-1758 ◽  
Author(s):  
J. B. Posthill ◽  
R. J. Markunas ◽  
T. P. Humphreys ◽  
R. J. Nemanich ◽  
K. Das ◽  
...  
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy

Kinetics of arsenic-enhanced solid phase epitaxy in silicon

2004 ◽  
Vol 95 (8) ◽  
pp. 4427-4431 ◽  
Author(s):  
B. C. Johnson ◽  
J. C. McCallum
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Kinetics Of

CrSi2/Si(111): Growth of monotype domains by solid phase epitaxy on a vicinal surface

1994 ◽  
Vol 12 (6) ◽  
pp. 3018-3022 ◽  
Author(s):  
André Rocher ◽  
André Oustry ◽  
Marie Josée David ◽  
Michel Caumont
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Vicinal Surface

Optical Waveguide Formation by Ion Implantation of Ti or Ag

1988 ◽  
Vol 100 ◽  
Author(s):  
D. B. Poker ◽  
D. K. Thomas
Keyword(s):  
Ion Implantation ◽  
Concentration Profile ◽  
Optical Waveguides ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Effective Means ◽  
Complete Removal ◽  
Solid Phase Epitaxy ◽  
Annealing Temperatures ◽  
Residual Damage

ABSTRACTIon implantation of Ti into LINbO3 has been shown to be an effective means of producing optical waveguides, while maintaining better control over the resulting concentration profile of the dopant than can be achieved by in-diffusion. While undoped, amorphous LiNbO3 can be regrown by solid-phase epitaxy at 400°C with a regrowth velocity of 250 Å/min, the higher concentrations of Ti required to form a waveguide (∼10%) slow the regrowth considerably, so that temperatures approaching 800°C are used. Complete removal of residual damage requires annealing temperatures of 1000°C, not significantly lower than those used with in-diffusion. Solid phase epitaxy of Agimplanted LiNbO3, however, occurs at much lower temperatures. The regrowth is completed at 400°C, and annealing of all residual damage occurs at or below 800°C. Furthermore, the regrowth rate is independent of Ag concentration up to the highest dose implanted to date, 1 × 1017 Ag/cm2. The usefulness of Ag implantation for the formation of optical waveguides is limited, however, by the higher mobility of Ag at the annealing temperature, compared to Ti.

2D Electronic Transport with Strong Spin–Orbit Coupling in Bi2– Square Net of Y2O2Bi Thin Film Grown by Multilayer Solid-Phase Epitaxy

2015 ◽  
Vol 7 (45) ◽  
pp. 24998-25001 ◽  
Author(s):  
Ryosuke Sei ◽  
Tomoteru Fukumura ◽  
Tetsuya Hasegawa
Keyword(s):  
Thin Film ◽  
Electronic Transport ◽  
Solid Phase ◽  
Orbit Coupling ◽  
Solid Phase Epitaxy ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Strong Spin

Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantation

1990 ◽  
Vol 57 (13) ◽  
pp. 1340-1342 ◽  
Author(s):  
J. A. Roth ◽  
G. L. Olson ◽  
D. C. Jacobson ◽  
J. M. Poate
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Kinetics Of

Pressure effects in multiphase binary diffusion couples

1985 ◽  
Vol 16 (4) ◽  
pp. 605-611 ◽  
Author(s):  
Dilip Subramanyam ◽  
Michael R. Notis ◽  
Joseph I. Goldstein
Keyword(s):  
Pressure Effects ◽  
Diffusion Couples ◽  
Binary Diffusion
Sign in / Sign up

Export Citation Format

Share Document