Kinetics of arsenic-enhanced solid phase epitaxy in silicon

AbstractThis paper discusses the intrusion of H into a-Si layers during solid phase epitaxy and the effect of this H on the growth kinetics. We show that during annealing in the presence of water vapor, H is continuously generated at the oxidizing a-Si surface and diffuses into the amorphous layer, where it causes a reduction in the epitaxial growth rate. The measured variation of growth rate with the depth of the amorphous/crystal interface is correlated with the concentration of H at the interface. The diffusion coefficient for H in a-Si is determined by comparing measured depth profiles with calculated values. Hydrogen intrusion is observed even in layers annealed in vacuum and in inert gas ambients. Thin (<;5000 Åthick) a-Si layers are especially susceptible to this effect, but we show that in spite of the presence of H the activation energy for SPE derived earlier from thin-layer data is in good agreement with the intrinsic value obtained from thick, hydrogen-free layers.

Download Full-text

The Loss Kinetics of Substitutional Carbon in Si1-xCxRegrown by Solid Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.773 ◽

2001 ◽

Vol 40 (Part 1, No. 2A) ◽

pp. 773-776 ◽

Cited By ~ 7

Author(s):

Yong Jeong Kim ◽

Tae-Joon Kim ◽

Tae-Kyung Kim ◽

Byungwoo Park ◽

Jong Han Song

Keyword(s):

Solid Phase ◽

Solid Phase Epitaxy ◽

Kinetics Of

Download Full-text

Crystallization Kinetics of Fe-DOPED A1203

MRS Proceedings ◽

10.1557/proc-357-201 ◽

1994 ◽

Vol 357 ◽

Cited By ~ 1

Author(s):

Todd W. Simpson ◽

Ian V. Mitchell ◽

Ning Yu ◽

Michael Nastasi ◽

Paul C. Mcintyre

Keyword(s):

Crystallization Kinetics ◽

Annealing Temperature ◽

Rutherford Backscattering Spectrometry ◽

Solid Phase ◽

Solid Phase Epitaxy ◽

Time Resolved ◽

Α Phase ◽

Kinetics Of ◽

Beam Deposition

AbstractTime resolved optical reflectivity (TRR) and Rutherford backscattering spectrometry (RBS) and ion channelling methods have been applied to determine the crystallization kinetics of Fe-doped A1203 in the temperature range of 900-1050°C. Amorphous A1203 films, approximately 250 nm thick and with Fe cation concentrations of 0, 1.85, 2.2 and 4.5%, were formed by e-beam deposition on single crystal, [0001] oriented, A1203 substrates. Annealing was performed under an oxygen ambient in a conventional tube furnace, and the optical changes which accompany crystallization were monitored, in situ, by TRR with a 633nm wavelength laser.Crystallization is observed to proceed via solid phase epitaxy. An intermediate, epitaxial phase of -γ-Al203 is formed before the samples reach the ultimate annealing temperature. The 5% Fe-doped film transforms from γ to α-A1203 at a rate approximately 10 times that of the pure A1203 film and the 1.85% and 2.2% Fe-doped films transform at rates between these two extremes. The Fe-dopants occupy substitional lattice sites in the epilayer. Each of the four sets of specimens displays an activation energy in the range 5.0±0.2eV for the γ,α phase transition.

Download Full-text

Kinetics and Mechanisms of Solid Phase Epitaxy and Competitive Processes in Silicon

MRS Proceedings ◽

10.1557/proc-35-25 ◽

1984 ◽

Vol 35 ◽

Cited By ~ 41

Author(s):

G.L. Olson

Keyword(s):

Amorphous Silicon ◽

Epitaxial Growth ◽

Recent Progress ◽

Solid Phase ◽

Solid Phase Epitaxy ◽

Temperature Dependent ◽

Solid Phase Crystallization ◽

Induced Changes ◽

Kinetics Of ◽

Very High

ABSTRACTRecent progress in studies of temperature dependent kinetic competition during solid phase crystallization of silicon is reviewed. Specific areas which are emphasized include: the enhancement of solid phase epitaxial growth rates by impurity-induced changes in electronic properties at the crystal/amorphous interface, the influence of impurity diffusion and precipitation in amorphous silicon on the kinetics of epitaxial growth, the effects of impurities on the kinetic competition between solid phase epitaxy and random crystallization, and the kinetics of solid phase crystallization at very high temperatures in silicon.

Download Full-text

Growth kinetics of iron silicides fabricated by solid phase epitaxy or ion beam synthesis

Thin Solid Films ◽

10.1016/0040-6090(92)90704-f ◽

1992 ◽

Vol 215 (1) ◽

pp. 76-83 ◽

Cited By ~ 17

Author(s):

K. Radermacher ◽

S. Mantl ◽

Ch. Dieker ◽

H. Lüth ◽

C. Freiburg

Keyword(s):

Growth Kinetics ◽

Solid Phase ◽

Ion Beam ◽

Solid Phase Epitaxy ◽

Iron Silicides ◽

Ion Beam Synthesis ◽

Kinetics Of

Download Full-text

The kinetics of dopant-enhanced solid phase epitaxy in H-free amorphous silicon layers

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/s0168-583x(98)00671-5 ◽

1999 ◽

Vol 148 (1-4) ◽

pp. 350-354 ◽

Cited By ~ 20

Author(s):

J.C McCallum

Keyword(s):

Amorphous Silicon ◽

Solid Phase ◽

Solid Phase Epitaxy ◽

Kinetics Of

Download Full-text

Kinetics of Intrinsic and Dopant-Enhanced Solid Phase Epitaxy in Buried Amorphous Si Layers

MRS Proceedings ◽

10.1557/proc-439-137 ◽

1996 ◽

Vol 439 ◽

Author(s):

J. C. McCallum

Keyword(s):

Ion Implantation ◽

Dopant Concentration ◽

Solid Phase ◽

Solid Phase Epitaxy ◽

Entire Concentration Range ◽

Time Resolved ◽

Amorphous Si ◽

First Time ◽

Kinetics Of ◽

Suitable Environment

AbstractThe kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) have been measured in buried amorphous Si (a-Si) layers produced by ion implantation. Buried a-Si layers formed by self-ion implantation provide a suitable environment for studies of the intrinsic growth kinetics of amorphous Si, free from the rate-retarding effects of H. For the first time, dopant-enhanced SPE rates have been measured under these H-free conditions. Buried a-Si layers containing uniform As concentration profiles ranging from 1–16.1 × 1019 As.cm−3 were produced by multiple-energy ion implantation and time resolved reflectivity was used to measure SPE rates over the temperature range 480–660°C. In contrast to earlier studies, the dopant-enhanced SPE rate is found to depend linearly on the As concentration over the entire concentration range measured. The SPE rate can be expressed in the form, v/vi(T) = 1 + N/[No exp(-ΔE/kT)], where vi(T) is the intrinsic SPE rate, N is the dopant concentration and No = 1.2 × 1021 cm−3, ΔE = 0.21 eV.

Download Full-text

Process and Mechanism of CoSi2/Si Solid Phase Epitaxy by Multilayer Reaction

MRS Proceedings ◽

10.1557/proc-580-117 ◽

1999 ◽

Vol 580 ◽

Author(s):

Bing-Zong Li ◽

Xin-Ping Qu ◽

Guo-Ping Ru ◽

Ning Wang ◽

Paul Chu

Keyword(s):

Epitaxial Growth ◽

Solid Phase ◽

Amorphous Layer ◽

Solid Phase Epitaxy ◽

Initial Stage ◽

Vital Effect ◽

Amorphous Si ◽

Kinetics Of ◽

State Amorphization

AbstractA multilayer structure of Co/a-Si/Ti/Si(100) together with Co/Ti/Si(100) is applied to investigate the process and mechanism of CoSi2 epitaxial growth on a Si(100) substrate. The experimental results show that by adding an amorphous Si layer with a certain thickness, the epitaxial quality of CoSi2 is significantly improved. A multi-element amorphous layer is formed by a solid state amorphization reaction at the initial stage of the multilayer reaction. This layer acts as a diffusion barrier, which controls the atomic interdiffusion of Co and Si and limits the supply of Co atoms. It has a vital effect on the multilayer reaction kinetics, and the epitaxial growth of CoSi2 on Si. The kinetics of the CoSi2 growth process from multilayer reactions is investigated.

Download Full-text

Lateral Solid Phase Epitaxy of Evaporated Amorphous Si Films onto SiO2 Patterns

MRS Proceedings ◽

10.1557/proc-25-511 ◽

1983 ◽

Vol 25 ◽

Cited By ~ 2

Author(s):

H. Yamamoto ◽

H. Ishiwara ◽

S. Furukawa ◽

M. Tamura ◽

T. Tokuyama

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Ion Implantation ◽

Solid Phase ◽

Solid Phase Epitaxy ◽

Si Substrates ◽

Transmission Electron ◽

Amorphous Si ◽

Si Films ◽

Kinetics Of

ABSTRACTLateral solid phase epitaxy (L-SPE) of amorphous Si (a-Si) films vacuum-evaporated on Si substrates with SiO2 patterns has been investigated, in which the film first grows vertically in the regions directly contacted to the Si substrates and then grows laterally onto SiO2 patterns. It has been found from transmission electron microscopy and Nomarski optical microscopy that use of dense a-Si films, which are formed by evaporation on heated substrates and subsequent amorphization by Si+ ion implantation, is essentially important for L-SPE. The maximum L-SPE length of 5–6μm was obtained along the <010> direction after 10hourannealing at 600°C. The kinetics of the L-SPE growth has also been investigated.

Download Full-text