Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44

Journal of Applied Physics ◽

10.1063/1.332655 ◽

1983 ◽

Vol 54 (8) ◽

pp. 4543-4552 ◽

Author(s):

K.‐H. Goetz ◽

D. Bimberg ◽

H. Jürgensen ◽

J. Selders ◽

A. V. Solomonov ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Liquid Phase ◽

Vapor Phase ◽

Liquid Phase Epitaxy ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Impurity Incorporation ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Low threshold 1.3-µm GaInAsP/InP buried heterostructure lasers by liquid-phase epitaxy and metal-organic chemical vapor deposition

10.1364/ofc.1981.tud1 ◽

1981 ◽

Author(s):

Willie Ng ◽

C. S. Hong ◽

H. Manasevit ◽

P. D. Dapkus

Keyword(s):

Chemical Vapor Deposition ◽

Liquid Phase ◽

Liquid Phase Epitaxy ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Organic ◽

Buried Heterostructure ◽

Low Threshold ◽

Organic Chemical Vapor Deposition

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A comparative study of (100) GaAs films grown by liquid-phase epitaxy, molecular-beam epitaxy and metal-organic chemical vapor deposition by Raman spectroscopy

Materials Letters ◽

10.1016/0167-577x(85)90069-2 ◽

1985 ◽

Vol 3 (9-10) ◽

pp. 325-330 ◽

Author(s):

V. Swaminathan ◽

A. Jayaraman ◽

J.L. Zilko ◽

R.A. Stall

Keyword(s):

Raman Spectroscopy ◽

Chemical Vapor Deposition ◽

Liquid Phase ◽

Vapor Deposition ◽

Molecular Beam ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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The influences of O/Zn ratio and growth temperature on carbon impurity incorporation in ZnO grown by metal-organic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2010.06.016 ◽

2010 ◽

Vol 312 (19) ◽

pp. 2710-2717 ◽

Author(s):

J.G. Liu ◽

S.L. Gu ◽

S.M. Zhu ◽

K. Tang ◽

X.D. Liu ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Growth Temperature ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Impurity Incorporation ◽

Carbon Impurity ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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The Variation of InxGa1-xSb Solid Compositions with the Vapor Phase Mole Fractions at Different Growth Pressures in Metal Organic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.1609 ◽

1991 ◽

Vol 30 (Part 1, No. 8) ◽

pp. 1609-1612 ◽

Author(s):

Yan Kuin Su ◽

Fuh Shyang Juang ◽

Tien Shou Wu

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Phase ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Effect of growth temperature on the impurity incorporation and material properties of N-polar GaN films grown by metal-organic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2013.09.013 ◽

2013 ◽

Vol 384 ◽

pp. 96-99 ◽

Author(s):

Zhiyu Lin ◽

Jincheng Zhang ◽

Rongtao Cao ◽

Wei Ha ◽

Shuai Zhang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Growth Temperature ◽

Vapor Deposition ◽

Material Properties ◽

Chemical Vapor ◽

Organic Chemical ◽

Impurity Incorporation ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth

Journal of Applied Physics ◽

10.1063/1.3599894 ◽

2011 ◽

Vol 109 (12) ◽

pp. 123701 ◽

Author(s):

A. Y. Polyakov ◽

I.-H. Lee ◽

N. B. Smirnov ◽

A. V. Govorkov ◽

E. A. Kozhukhova ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Phase ◽

Vapor Deposition ◽

Chemical Vapor ◽

Hydride Vapor Phase Epitaxy ◽

Epitaxial Lateral Overgrowth ◽

Organic Chemical ◽

Lateral Overgrowth ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2010.09.026 ◽

2010 ◽

Vol 312 (23) ◽

pp. 3521-3524 ◽

Author(s):

S.R. Xu ◽

Y. Hao ◽

J.C. Zhang ◽

Y.R. Cao ◽

X.W. Zhou ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Yellow Luminescence ◽

Impurity Incorporation ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Surface treatments toward obtaining clean GaN(0001) from commercial hydride vapor phase epitaxy and metal-organic chemical vapor deposition substrates in ultrahigh vacuum

Applied Surface Science ◽

10.1016/j.apsusc.2010.03.001 ◽

2010 ◽

Vol 256 (14) ◽

pp. 4745-4756 ◽

Author(s):

Azusa N. Hattori ◽

Katsuyoshi Endo ◽

Ken Hattori ◽

Hiroshi Daimon

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Phase ◽

Vapor Deposition ◽

Ultrahigh Vacuum ◽

Chemical Vapor ◽

Surface Treatments ◽

Hydride Vapor Phase Epitaxy ◽

Organic Chemical ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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NUMERICAL VISUALIZATION OF THERMAL FLOW STRUCTURE AND CONCENTRATION CONTOURS IN METAL ORGANIC CHEMICAL VAPOR DEPOSITION REACTORS

Journal of Flow Visualization and Image Processing ◽

10.1615/jflowvisimageproc.v7.i1.20 ◽

2000 ◽

Vol 7 (1) ◽

pp. 12

Author(s):

R. Y. Tzong ◽

C. Y. Soong

Keyword(s):

Chemical Vapor Deposition ◽

Flow Structure ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Thermal Flow ◽

Numerical Visualization ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Laser‐Assisted Metal–Organic Chemical Vapor Deposition of Gallium Nitride

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.202170024 ◽

2021 ◽

Vol 15 (6) ◽

pp. 2170024

Author(s):

Yuxuan Zhang ◽

Zhaoying Chen ◽

Kaitian Zhang ◽

Zixuan Feng ◽

Hongping Zhao

Keyword(s):

Gallium Nitride ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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