Investigation of surface mobility in thin‐gate oxide metal‐oxide‐semiconductor field‐effect transistors

1985 ◽  
Vol 58 (11) ◽  
pp. 4245-4250
Author(s):  
T. W. Chan ◽  
Y. C. Cheng
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Surface Mobility ◽  
Thin Gate Oxide

Improvement of Reliability of Metal-Oxide Semiconductor Field-Effect Transistors with N2O Nitrided Gate Oxide and N2O Polysilicon Gate Reoxidation

1998 ◽  
Vol 37 (Part 1, No. 10) ◽  
pp. 5507-5509
Author(s):  
Chao Sung Lai ◽  
Tien Sheng Chao ◽  
Tan Fu Lei ◽  
Chung Len Lee ◽  
Tiao Yuan Huang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Polysilicon Gate

Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC(000-1)

2008 ◽  
Vol 600-603 ◽  
pp. 791-794 ◽  
Author(s):  
Takuma Suzuki ◽  
Junji Senzaki ◽  
Tetsuo Hatakeyama ◽  
Kenji Fukuda ◽  
Takashi Shinohe ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Dielectric Breakdown ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Channel Mobility ◽  
Time Dependent Dielectric Breakdown ◽  
Oxide Reliability

The channel mobility and oxide reliability of metal-oxide-semiconductor field-effect transistors (MOSFETs) on 4H-SiC (0001) carbon face were investigated. The gate oxide was fabricated by using dry-oxidized film followed by pyrogenic reoxidation annealing (ROA). Significant improvements in the oxide reliability were observed by time-dependent dielectric breakdown (TDDB) measurement. Furthermore, the field-effect inversion channel mobility (μFE) of MOSFETs fabricated by using pyrogenic ROA was as high as that of conventional 4H-SiC (0001) MOSFETs having the pyrogenic-oxidized gate oxide. It is suggested that the pyrogenic ROA of dry oxide as a method of gate oxide fabrication satisfies both channel mobility and oxide reliability on 4H-SiC (0001) carbon-face MOSFETs.

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