Annealing and oxidation behavior of low‐pressure chemical vapor deposited tungsten slicide layers on polycrystalline silicon gates

1987 ◽  
Vol 62 (7) ◽  
pp. 2830-2835 ◽  
Author(s):  
D. K. Sadana ◽  
A. E. Morgan ◽  
M. H. Norcott ◽  
S. Naik
Keyword(s):  
Polycrystalline Silicon ◽  
Oxidation Behavior ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical

Lateral diffusion of arsenic in low pressure chemical vapor deposited polycrystalline silicon

1983 ◽  
Vol 42 (2) ◽  
pp. 171-172 ◽  
Author(s):  
N. Lewis ◽  
G. Gildenblat ◽  
M. Ghezzo ◽  
W. Katz ◽  
G. A. Smith
Keyword(s):  
Polycrystalline Silicon ◽  
Lateral Diffusion ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical

High quality unhydrogenated low-pressure chemical vapor deposited polycrystalline silicon

2000 ◽  
Vol 266-269 ◽  
pp. 141-145 ◽  
Author(s):  
R Rogel ◽  
M Sarret ◽  
T Mohammed-Brahim ◽  
O Bonnaud ◽  
J.P Kleider
Keyword(s):  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical
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