Fracture toughness of low-pressure chemical-vapor-deposited polycrystalline silicon carbide thin films

Journal of Applied Physics ◽

10.1063/1.2158135 ◽

2006 ◽

Vol 99 (1) ◽

pp. 013517 ◽

Author(s):

V. Hatty ◽

H. Kahn ◽

J. Trevino ◽

C. A. Zorman ◽

M. Mehregany ◽

...

Keyword(s):

Fracture Toughness ◽

Silicon Carbide ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Polycrystalline Silicon Carbide ◽

Pressure Chemical

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Improvement of process parameters for polycrystalline silicon carbide low pressure chemical vapor deposition on 150mm silicon substrate using monomethylsilane as precursor

Thin Solid Films ◽

10.1016/j.tsf.2013.03.053 ◽

2013 ◽

Vol 536 ◽

pp. 94-98 ◽

Author(s):

A. Ajayakumar ◽

S. Maruthoor ◽

T. Fuchs ◽

F. Rohlfing ◽

O. Jakovlev ◽

...

Keyword(s):

Silicon Carbide ◽

Chemical Vapor Deposition ◽

Process Parameters ◽

Vapor Deposition ◽

Silicon Substrate ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Polycrystalline Silicon Carbide ◽

Pressure Chemical

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Summary Abstract: Comparative study of polycrystalline silicon thin films deposited by very low pressure chemical vapor deposition with and without plasma enhancement

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.574482 ◽

1987 ◽

Vol 5 (4) ◽

pp. 1903-1904 ◽

Author(s):

J.‐J. J. Hajjar ◽

R. Reif ◽

D. Adler

Keyword(s):

Chemical Vapor Deposition ◽

Comparative Study ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Thin Films ◽

Pressure Chemical ◽

Plasma Enhancement

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Low-Pressure Chemical Vapor Deposition of Silicon Carbide Thin Films from Organopolysilanes

Journal of the Chinese Chemical Society ◽

10.1002/jccs.199100039 ◽

1991 ◽

Vol 38 (3) ◽

pp. 231-234 ◽

Author(s):

Hsin-Tien Chiu ◽

Pei-Fang Wu

Keyword(s):

Silicon Carbide ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Pressure Chemical

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Annealing and oxidation behavior of low‐pressure chemical vapor deposited tungsten slicide layers on polycrystalline silicon gates

Journal of Applied Physics ◽

10.1063/1.339414 ◽

1987 ◽

Vol 62 (7) ◽

pp. 2830-2835 ◽

Author(s):

D. K. Sadana ◽

A. E. Morgan ◽

M. H. Norcott ◽

S. Naik

Keyword(s):

Polycrystalline Silicon ◽

Oxidation Behavior ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Influence of deposition pressure on the bulk and interface states in low pressure chemical vapor deposited polycrystalline silicon thin‐film transistors

Applied Physics Letters ◽

10.1063/1.111473 ◽

1994 ◽

Vol 64 (20) ◽

pp. 2709-2711 ◽

Author(s):

C. A. Dimitriadis ◽

D. H. Tassis ◽

N. A. Economou ◽

G. Giakoumakis

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Interface States ◽

Deposition Pressure ◽

Silicon Thin Film ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Low-Pressure Chemical Vapor Deposition of Semi-insulating Polycrystalline Silicon Thin Films: I. Experimental Study and Proposal of New Kinetic Laws

Journal of The Electrochemical Society ◽

10.1149/1.1346601 ◽

2001 ◽

Vol 148 (3) ◽

pp. C149 ◽

Author(s):

P. Barathieu ◽

B. Caussat ◽

E. Scheid ◽

D. Jaume ◽

J. P. Couderc

Keyword(s):

Experimental Study ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Thin Films ◽

Pressure Chemical

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Thermal conductivity of heavily doped low‐pressure chemical vapor deposited polycrystalline silicon films

Journal of Applied Physics ◽

10.1063/1.339924 ◽

1988 ◽

Vol 63 (5) ◽

pp. 1442-1447 ◽

Author(s):

Y. C. Tai ◽

C. H. Mastrangelo ◽

R. S. Muller

Keyword(s):

Thermal Conductivity ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Heavily Doped ◽

Polycrystalline Silicon Films

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The Properties of Low Pressure Chemical Vapor Deposited Boron Nitride Thin Films

Materials Science Forum ◽

10.4028/www.scientific.net/msf.54-55.229 ◽

1991 ◽

Vol 54-55 ◽

pp. 229-260 ◽

Author(s):

S.S. Dana

Keyword(s):

Boron Nitride ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Effects of temperature and electrical stress on the performance of thin‐film transistors fabricated from undoped low‐pressure chemical vapor deposited polycrystalline silicon

Applied Physics Letters ◽

10.1063/1.100897 ◽

1989 ◽

Vol 54 (7) ◽

pp. 620-622 ◽

Author(s):

C. A. Dimitriadis ◽

P. A. Coxon

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Electrical Stress ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Effects Of Temperature

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Electrical properties of low pressure chemical vapor deposited silicon nitride thin films for temperatures up to 650 °C

Journal of Applied Physics ◽

10.1063/1.3078027 ◽

2009 ◽

Vol 105 (3) ◽

pp. 033714 ◽

Author(s):

R. M. Tiggelaar ◽

A. W. Groenland ◽

R. G. P. Sanders ◽

J. G. E. Gardeniers

Keyword(s):

Silicon Nitride ◽

Electrical Properties ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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