Electrical and optical properties of gold‐dopedn‐type silicon

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Vol 65 (1) ◽  
pp. 137-145 ◽  
Author(s):  
H. Weman ◽  
A. Henry ◽  
T. Begum ◽  
B. Monemar ◽  
O. O. Awadelkarim ◽  
...  
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Author(s):  
Ahmet Faruk Özdemir ◽  
Sinem Gürkan Aydin ◽  
Durmuş Ali Aldemir ◽  
Songül Şen Gürsoy

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-869-C4-872
Author(s):  
R. T. Phillips ◽  
A. J. Mackintosh ◽  
A. D. Yoffe

2020 ◽  
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Vol 672 ◽  
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Adam Adikimenakis ◽  
Edmund Dobročka ◽  
Róbert Kúdela ◽  
Milan Ťapajna ◽  
...  

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 1024
Author(s):  
Jingjing Peng ◽  
Changshan Hao ◽  
Hongyan Liu ◽  
Yue Yan

Highly transparent indium-free multilayers of TiO2/Cu/TiO2 were obtained by means of annealing. The effects of Cu thickness and annealing temperature on the electrical and optical properties were investigated. The critical thickness of Cu mid-layer with optimal electrical and optical properties was 10 nm, with the figure of merit reaching as high as 5 × 10−3 Ω−1. Partial crystallization of the TiO2 layer enhanced the electrical and optical properties upon annealing. Electrothermal experiments showed that temperatures of more than 100 °C can be reached at a heating rate of 2 °C/s without any damage to the multilayers. The experimental results indicate that reliable transparent TiO2/Cu/TiO2 multilayers can be used for electrothermal application.


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