Examination of electrical and optical properties of vanadium in bulkn‐type silicon carbide

AbstractExperimental and numerical analysis have been performed on the sublimation growth process of SiC bulk crystals. Crystallographic, electrical and optical properties of the grown silicon carbide (SIC) crystals have been evaluated by various characterization techniques. Numerical models for the global simulation of SiC bulk growth including heat and mass transfer and chemical processes are applied and experimentally verified.

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Electrical and optical properties of amorphous silicon carbide thin films prepared by e-beam evaporation at room temperature

Journal of Non-Crystalline Solids ◽

10.1016/j.jnoncrysol.2021.121233 ◽

2022 ◽

Vol 576 ◽

pp. 121233

Author(s):

Jia Zheng ◽

Lei Ye ◽

Manduo He ◽

Duyi He ◽

Yuelong Huang ◽

...

Keyword(s):

Thin Films ◽

Silicon Carbide ◽

Optical Properties ◽

Amorphous Silicon ◽

Room Temperature ◽

Electrical And Optical Properties ◽

Amorphous Silicon Carbide

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Effects of hydroxyl groups and hydrogen passivation on the structure, electrical and optical properties of silicon carbide nanowires

Physics Letters A ◽

10.1016/j.physleta.2019.126106 ◽

2020 ◽

Vol 384 (4) ◽

pp. 126106 ◽

Cited By ~ 7

Author(s):

Ya-Hui Jia ◽

Pei Gong ◽

Shu-Long Li ◽

Wan-Duo Ma ◽

Xiao-Yong Fang ◽

...

Keyword(s):

Silicon Carbide ◽

Optical Properties ◽

Hydroxyl Groups ◽

Hydrogen Passivation ◽

Electrical And Optical Properties

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Study of the Electrical and Optical Properties of the Silicon Carbide Thin Film

ECS Transactions ◽

10.1149/1.3567637 ◽

2019 ◽

Vol 34 (1) ◽

pp. 557-561

Author(s):

Rui Luo ◽

Huidong Yang ◽

Bo Huang ◽

B. Y. Xu

Keyword(s):

Thin Film ◽

Silicon Carbide ◽

Optical Properties ◽

Electrical And Optical Properties

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Electrical and optical properties of amorphous silicon carbide, silicon nitride and germanium carbide prepared by the glow discharge technique

Philosophical Magazine ◽

10.1080/14786437708235967 ◽

1977 ◽

Vol 35 (1) ◽

pp. 1-16 ◽

Cited By ~ 366

Author(s):

D. A. Anderson ◽

W. E. Spear

Keyword(s):

Silicon Carbide ◽

Optical Properties ◽

Silicon Nitride ◽

Glow Discharge ◽

Amorphous Silicon ◽

Electrical And Optical Properties ◽

Amorphous Silicon Carbide ◽

Germanium Carbide

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UV-Sensitive Metal-Semiconductor Photodiodes on 6H-SIC.

MRS Proceedings ◽

10.1557/proc-339-215 ◽

1994 ◽

Vol 339 ◽

Cited By ~ 3

Author(s):

Christer Fröjdh ◽

Göran Thungström ◽

Hans-Erik Nilsson ◽

C. Sture Petersson

Keyword(s):

Silicon Carbide ◽

Optical Properties ◽

Ideality Factor ◽

Schottky Diodes ◽

Reverse Current ◽

Fabrication Process ◽

Electrical And Optical Properties ◽

Peak Sensitivity

ABSTRACTSchottky diodes on Silicon Carbide (SiC) are of interest for many applications because of the relatively simple fabrication process. In this work we have fabricated Schottky diodes by evaporation of Ti on 6H-SiC and measured their electrical and optical properties. Most of the diodes show good rectifying behaviour with low reverse current and an ideality factor below 1.20. The photoresponse of the diodes has been measured in the range 200 – 400 nm. The peak sensitivity was found to be at 270 nm.

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