Total dose effect on soft error rate for dynamic metal‐oxide‐semiconductor memory cells

Journal of Applied Physics ◽

10.1063/1.342596 ◽

1989 ◽

Vol 65 (9) ◽

pp. 3694-3697 ◽

Author(s):

Reuben Benumof

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Dose Effect ◽

Memory Cells ◽

Semiconductor Memory ◽

Soft Error Rate

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A Novel Layout-Based Single Event Transient Injection Approach to Evaluate the Soft Error Rate of Large Combinational Circuits in Complimentary Metal-Oxide-Semiconductor Bulk Technology

IEEE Transactions on Reliability ◽

10.1109/tr.2015.2427372 ◽

2016 ◽

Vol 65 (1) ◽

pp. 248-255 ◽

Author(s):

Yankang Du ◽

Shuming Chen

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Combinational Circuits ◽

Single Event ◽

Single Event Transient ◽

Soft Error Rate ◽

Bulk Technology

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Total dose effect of Al2O3-based metal–oxide–semiconductor structures and its mechanism under gamma-ray irradiation

Semiconductor Science and Technology ◽

10.1088/1361-6641/aada7a ◽

2018 ◽

Vol 33 (11) ◽

pp. 115010 ◽

Author(s):

H P Zhu ◽

Z S Zheng ◽

B Li ◽

B H Li ◽

G P Zhang ◽

...

Keyword(s):

Metal Oxide ◽

Gamma Ray ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Dose Effect ◽

Semiconductor Structures ◽

Gamma Ray Irradiation

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Effect of Temperature on Parameters in Total Dose Effect Prediction of Metal Oxide Semiconductor Devices

Journal of Nuclear Science and Technology ◽

10.1080/18811248.1991.9731484 ◽

1991 ◽

Vol 28 (12) ◽

pp. 1149-1152 ◽

Author(s):

Hiroshi KAMIMURA ◽

Masataka KATO

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Dose Effect ◽

Effect Of Temperature

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Soft Error Hardened Memory Design for Nanoscale Complementary Metal Oxide Semiconductor Technology

IEEE Transactions on Reliability ◽

10.1109/tr.2015.2410275 ◽

2015 ◽

Vol 64 (2) ◽

pp. 596-602 ◽

Author(s):

Jing Guo ◽

Liyi Xiao ◽

Tianqi Wang ◽

Shanshan Liu ◽

Xu Wang ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

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Prediction Method for Total Dose Effects on Complementary Metal Oxide Semiconductor Integrated Circuits

Journal of Nuclear Science and Technology ◽

10.1080/18811248.1990.9731173 ◽

1990 ◽

Vol 27 (3) ◽

pp. 215-221 ◽

Author(s):

Hiroshi KAMIMURA ◽

Masaharu SAKAGAMI

Keyword(s):

Integrated Circuits ◽

Metal Oxide ◽

Prediction Method ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Dose Effects ◽

Total Dose Effects

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A room-temperature silicon single-electron metal–oxide–semiconductor memory with nanoscale floating-gate and ultranarrow channel

Applied Physics Letters ◽

10.1063/1.118236 ◽

1997 ◽

Vol 70 (7) ◽

pp. 850-852 ◽

Author(s):

Lingjie Guo ◽

Effendi Leobandung ◽

Stephen Y. Chou

Keyword(s):

Metal Oxide ◽

Room Temperature ◽

Metal Oxide Semiconductor ◽

Floating Gate ◽

Single Electron ◽

Oxide Semiconductor ◽

Semiconductor Memory

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Influence of -ray total dose radiation effect on the tunneling gate current of the uniaxial strained Si nanometer n-channel metal-oxide-semiconductor field-effect transistor

Acta Physica Sinica ◽

10.7498/aps.66.076101 ◽

2017 ◽

Vol 66 (7) ◽

pp. 076101

Author(s):

Hao Min-Ru ◽

Hu Hui-Yong ◽

Liao Chen-Guang ◽

Wang Bin ◽

Zhao Xiao-Hong ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Radiation Effect ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Effect Transistor ◽

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Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals

Journal of Applied Physics ◽

10.1063/1.368346 ◽

1998 ◽

Vol 84 (4) ◽

pp. 2358-2360 ◽

Author(s):

Yi Shi ◽

Kenichi Saito ◽

Hiroki Ishikuro ◽

Toshiro Hiramoto

Keyword(s):

Metal Oxide ◽

Silicon Nanocrystals ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Storage ◽

Semiconductor Memory ◽

Storage Characteristics ◽

Memory Structures

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Electrical Characterization of Metal–Oxide–Semiconductor Memory Devices with High-Density Self-Assembled Tungsten Nanodots

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2680 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2680-2683 ◽

Author(s):

Yan-Li Pei ◽

Takafumi Fukushima ◽

Tetsu Tanaka ◽

Mitsumasa Koyanagi

Keyword(s):

Metal Oxide ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

High Density ◽

Oxide Semiconductor ◽

Memory Devices ◽

Semiconductor Memory ◽

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Total dose response of hafnium oxide based metal-oxide- semiconductor structure under gamma-ray irradiation

IEEE Transactions on Dielectrics and Electrical Insulation ◽

10.1109/tdei.2014.004315 ◽

2014 ◽

Vol 21 (4) ◽

pp. 1792-1800 ◽

Author(s):

Man Ding ◽

Yonghong Cheng ◽

Xin Liu ◽

Xiaolong Li

Keyword(s):

Metal Oxide ◽

Dose Response ◽

Hafnium Oxide ◽

Gamma Ray ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Gamma Ray Irradiation ◽

Metal Oxide Semiconductor Structure

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