Soft Error Hardened Memory Design for Nanoscale Complementary Metal Oxide Semiconductor Technology

IEEE Transactions on Reliability ◽

10.1109/tr.2015.2410275 ◽

2015 ◽

Vol 64 (2) ◽

pp. 596-602 ◽

Author(s):

Jing Guo ◽

Liyi Xiao ◽

Tianqi Wang ◽

Shanshan Liu ◽

Xu Wang ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

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A novel way to improve the quantum efficiency of silicon light-emitting diode in a standard silicon complementary metal–oxide–semiconductor technology

Journal of Applied Physics ◽

10.1063/1.4795170 ◽

2013 ◽

Vol 113 (10) ◽

pp. 103106 ◽

Author(s):

Kaikai Xu ◽

G. P. Li

Keyword(s):

Metal Oxide ◽

Quantum Efficiency ◽

Light Emitting Diode ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

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The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

Chinese Physics B ◽

10.1088/1674-1056/20/12/129401 ◽

2011 ◽

Vol 20 (12) ◽

pp. 129401 ◽

Author(s):

Jun-Rui Qin ◽

Shu-Ming Chen ◽

Bi-Wei Liu ◽

Zheng Liu ◽

Bin Liang ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Collection ◽

Single Event ◽

Semiconductor Technology ◽

Modulation Effect ◽

Single Event Transient ◽

Substrate Doping

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Design and demonstration of antenna-coupled Schottky diodes in a foundry complementary metal-oxide semiconductor technology for electronic detection of far-infrared radiation

Journal of Applied Physics ◽

10.1063/1.5083689 ◽

2019 ◽

Vol 125 (19) ◽

pp. 194501 ◽

Author(s):

Z. Ahmad ◽

A. Lisauskas ◽

H. G. Roskos ◽

K. K. O

Keyword(s):

Metal Oxide ◽

Infrared Radiation ◽

Schottky Diodes ◽

Complementary Metal Oxide Semiconductor ◽

Far Infrared ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Electronic Detection ◽

Far Infrared Radiation

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Empirical implantation damage model and its effect on reverse short channel effect for 0.35 μm complementary metal–oxide–semiconductor technology

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589934 ◽

1998 ◽

Vol 16 (1) ◽

pp. 430

Author(s):

Jongmin Kim

Keyword(s):

Metal Oxide ◽

Damage Model ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Short Channel ◽

Short Channel Effect ◽

Implantation Damage ◽

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Bit Swapping Linear Feedback Shift Register for Low Power Application Using 130nm Complementary Metal Oxide Semiconductor Technology

International Journal of Engineering ◽

10.5829/idosi.ije.2017.30.08b.03 ◽

2017 ◽

Keyword(s):

Metal Oxide ◽

Low Power ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Shift Register ◽

Oxide Semiconductor ◽

Linear Feedback ◽

Semiconductor Technology ◽

Feedback Shift Register ◽

Power Application

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Retina for pattern matching in standard 0.6-μm complementary metal oxide semiconductor technology

Journal of Electronic Imaging ◽

10.1117/1.1762886 ◽

2004 ◽

Vol 13 (3) ◽

pp. 559 ◽

Author(s):

Olivier Aubreton

Keyword(s):

Metal Oxide ◽

Pattern Matching ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology

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Monolithic H‐bridge brushless DC vibration motor driver with a highly sensitive Hall sensor in 0.18 μm complementary metal‐oxide semiconductor technology

IET Circuits Devices & Systems ◽

10.1049/iet-cds.2012.0167 ◽

2013 ◽

Vol 7 (4) ◽

pp. 204-210 ◽

Author(s):

Yue Xu ◽

Hong‐Bin Pan ◽

Shu‐Zhuan He ◽

Li Li

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Hall Sensor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Brushless Dc ◽

Highly Sensitive

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Optimized Si-Cap Layer Thickness for Tensile-Strained-Si/ Compressively Strained SiGe Dual-Channel Transistors in 0.13 µm Complementary Metal Oxide Semiconductor Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.l1248 ◽

2005 ◽

Vol 44 (No. 40) ◽

pp. L1248-L1251 ◽

Author(s):

Yen Ping Wang ◽

San Lein Wu ◽

Shoou Jinn Chang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Strained Si ◽

Dual Channel ◽

Cap Layer ◽

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Nanometer-Thick Single-Crystal Hexagonal Gd2 O3 on GaN for Advanced Complementary Metal-Oxide-Semiconductor Technology

Advanced Materials ◽

10.1002/adma.200902101 ◽

2009 ◽

Vol 21 (48) ◽

pp. 4970-4974 ◽

Author(s):

Wen Hsin Chang ◽

Chih Hsun Lee ◽

Yao Chung Chang ◽

Pen Chang ◽

Mao Lin Huang ◽

...

Keyword(s):

Metal Oxide ◽

Single Crystal ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology

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Low-temperature formation of highly reliable silicon-nitride gate dielectrics with suppressed soft-breakdown phenomena for advanced complementary metal–oxide–semiconductor technology

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1491550 ◽

2002 ◽

Vol 20 (4) ◽

pp. 1406 ◽

Author(s):

Anri Nakajima ◽

Quazi Deen Mohd Khosru ◽

Takashi Yoshimoto ◽

Toshirou Kidera ◽

Shin Yokoyama

Keyword(s):

Silicon Nitride ◽

Low Temperature ◽

Metal Oxide ◽

Gate Dielectrics ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

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