Electrical characterization of gallium planar‐doped ZnSe grown by molecular‐beam epitaxy

1989 ◽  
Vol 66 (9) ◽  
pp. 4295-4300 ◽  
Author(s):  
S. M. Shibli ◽  
M. C. Tamargo ◽  
J. L. De Miguel ◽  
B. J. Skromme ◽  
R. E. Nahory ◽  
...  
1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.


2013 ◽  
Vol 103 (9) ◽  
pp. 092103 ◽  
Author(s):  
Vl. Kolkovsky ◽  
Z. R. Zytkiewicz ◽  
M. Sobanska ◽  
K. Klosek

2019 ◽  
Vol 126 (9) ◽  
pp. 095702 ◽  
Author(s):  
Abhishek Vaidya ◽  
Jith Sarker ◽  
Yi Zhang ◽  
Lauren Lubecki ◽  
Joshua Wallace ◽  
...  

1993 ◽  
Vol 32 (Part 1, No. 1B) ◽  
pp. 523-527 ◽  
Author(s):  
Makoto Inai ◽  
Teiji Yamamoto ◽  
Mototada Fujii ◽  
Toshihiko Takebe ◽  
Kikuo Kobayashi

2007 ◽  
Vol 37 (1-2) ◽  
pp. 134-137 ◽  
Author(s):  
M. Piccin ◽  
G. Bais ◽  
V. Grillo ◽  
F. Jabeen ◽  
S. De Franceschi ◽  
...  

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