Fabrication and electrical characterization of ultra thin epitaxial γ-Al/sub 2/O/sub 3/ gate dielectric films on Si[100] by molecular beam epitaxy (MBE)

Author(s):  
M. Shahjahan ◽  
N. Takahashi ◽  
K. Sawada ◽  
M. Ishida
1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.


2013 ◽  
Vol 103 (9) ◽  
pp. 092103 ◽  
Author(s):  
Vl. Kolkovsky ◽  
Z. R. Zytkiewicz ◽  
M. Sobanska ◽  
K. Klosek

1989 ◽  
Vol 66 (9) ◽  
pp. 4295-4300 ◽  
Author(s):  
S. M. Shibli ◽  
M. C. Tamargo ◽  
J. L. De Miguel ◽  
B. J. Skromme ◽  
R. E. Nahory ◽  
...  

2019 ◽  
Vol 126 (9) ◽  
pp. 095702 ◽  
Author(s):  
Abhishek Vaidya ◽  
Jith Sarker ◽  
Yi Zhang ◽  
Lauren Lubecki ◽  
Joshua Wallace ◽  
...  

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