Structural, band and electrical characterization of β-(Al0.19Ga0.81)2O3 films grown by molecular beam epitaxy on Sn doped β-Ga2O3 substrate
1991 ◽
pp. 669-674
1999 ◽
Vol 17
(4)
◽
pp. 1307-1312
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Keyword(s):
1993 ◽
Vol 32
(Part 1, No. 1B)
◽
pp. 523-527
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2007 ◽
Vol 37
(1-2)
◽
pp. 134-137
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