Low‐temperature operating life of continuous 300‐K AlxGa1−xAs‐GaAs quantum‐well heterostructure lasers grown on Si
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Keyword(s):
1996 ◽
Vol 46
(S5)
◽
pp. 2511-2512
◽
1983 ◽
Vol 48
(8)
◽
pp. 671-673
◽
Keyword(s):
Keyword(s):