Low‐temperature operating life of continuous 300‐K AlxGa1−xAs‐GaAs quantum‐well heterostructure lasers grown on Si

1991 ◽  
Vol 69 (10) ◽  
pp. 6844-6849 ◽  
Author(s):  
D. C. Hall ◽  
N. Holonyak ◽  
D. G. Deppe ◽  
M. J. Ries ◽  
R. J. Matyi ◽  
...  
Author(s):  
Chunyu Zhang ◽  
Lakshmi Vedula ◽  
Shekhar Khandekar

Abstract Latch-up induced during High Temperature Operating Life (HTOL) test of a mixed signal device fabricated with 1.0 μm CMOS, double poly, double metal process caused failures due to an open in aluminum metal line. Metal lines revealed wedge voids of about 50% of the line width. Triggering of latch up mechanism during the HTOL test resulted in a several fold increase of current flowing through the ground metal line. This increase in current resulted in the growth of the wedge voids leading to failures due to open metal lines.


ACS Omega ◽  
2021 ◽  
Author(s):  
Kiran Mahalingappa ◽  
Gowtham Maralur Pranesh ◽  
Gopinatha Bidarkatte Manjunath ◽  
Shridhar Mundinamani ◽  
Shilpa Molakkalu Padre ◽  
...  

2020 ◽  
Vol 97 (2) ◽  
pp. 43-55
Author(s):  
Jean-Pierre Landesman ◽  
Nebile Isik Goktas ◽  
Ray R LaPierre ◽  
Shahram Ghanad-Tavakoli ◽  
Erwine Pargon ◽  
...  

1996 ◽  
Vol 46 (S5) ◽  
pp. 2511-2512 ◽  
Author(s):  
Igor Rudnev ◽  
Vladimir F. Elesin ◽  
Vladimir Kadushkin ◽  
Elena Shangina
Keyword(s):  

1983 ◽  
Vol 48 (8) ◽  
pp. 671-673 ◽  
Author(s):  
P. Gavrilovic ◽  
K. Hess ◽  
N. Holonyak ◽  
R.D. Burnham ◽  
T.L. Paoli ◽  
...  

1993 ◽  
Vol 14 (1-3) ◽  
pp. 663-664
Author(s):  
Koji Sode ◽  
Satoshi Nakasono ◽  
Mitsuharu Tanaka ◽  
Tadashi Matsunaga

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