Surface segregation of Si in δ-doped In0.53Ga0.47As grown by molecular beam epitaxy

1997 ◽  
Vol 175-176 ◽  
pp. 229-233 ◽  
Author(s):  
B. Vögele ◽  
C.R. Stanley ◽  
E. Skuras ◽  
A.R. Long ◽  
E.A. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Segregation

Near-Surface Aggregation of Sn In Heavily Sn-Doped GaAs Films Grown By Molecular Beam Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 368-369
Author(s):  
S. H. Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cross Section ◽  
Electron Spectroscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Specimen Preparation ◽  
Near Surface ◽  
Gaas Films ◽  
Secondary Ion

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.

scholarly journals Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy

1999 ◽  
Vol 4 (S1) ◽  
pp. 858-863
Author(s):  
Huajie Chen ◽  
A. R. Smith ◽  
R. M. Feenstra ◽  
D. W. Greve ◽  
J. E. Northrup
Keyword(s):  
Molecular Beam Epitaxy ◽  
Scanning Tunneling Microscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Growth Parameters ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Group V ◽  
Group Iii ◽  
Ingan Alloys

InGaN alloys with indium compositions ranging from 0–40% have been grown by molecular beam epitaxy. The dependence of the indium incorporation on growth temperature and group III/group V ratio has been studied. Scanning tunneling microscopy images, interpreted using first-principles theoretical computations, show that there is strong indium surface segregation on InGaN. Based on this surface segregation, a qualitative model is proposed to explain the observed indium incorporation dependence on the growth parameters.

Ge surface segregation at low temperature during SiGe growth by molecular beam epitaxy

1994 ◽  
Vol 65 (6) ◽  
pp. 711-713 ◽  
Author(s):  
D. J. Godbey ◽  
J. V. Lill ◽  
J. Deppe ◽  
K. D. Hobart
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Surface Segregation

Measurement and Control of The Indium Composition Profile Near The InGaAs on GaAs Interface During Mbe

1995 ◽  
Vol 379 ◽  
Author(s):  
Ron Kaspi ◽  
Keith R. Evans
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Alloy Composition ◽  
Composition Profile ◽  
Indium Composition ◽  
And Control ◽  
Measurement And Control

ABSTRACTThe compositional abruptness at both the normal and the inverted InGaAs/Ga(Al)As interface is inherently limited by the surface segregation of In atoms during molecular beam epitaxy. We find, for example, that the intended alloy composition in In0.22Ga0.78As layers is not reached until nearly 35 Å from the normal InGaAs on GaAs interface for growth at 500 °C. We propose and demonstrate a scheme to control and eliminate the compositionally graded region at the normal interface by the artificial formation of an In surface segregated layer (predeposition) prior to the growth of InGaAs.

Analysis of indium surface segregation in molecular beam epitaxy of InGaAs/GaAs quantum wells

1997 ◽  
Vol 117-118 ◽  
pp. 700-704 ◽  
Author(s):  
Koichi Yamaguchi ◽  
Tetsuya Okada ◽  
Fumito Hiwatashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Surface Segregation

Growth of Nonpolar (1100) Films and Heterostructures by Plasma-Assisted Molecular Beam Epitaxy

2004 ◽  
Vol 831 ◽  
Author(s):  
Oliver Brandt ◽  
Yue Jun Sun ◽  
Klaus H. Ploog
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Multiple Quantum Well ◽  
Growth Conditions ◽  
High Energy ◽  
Growth Direction ◽  
Desorption Kinetics ◽  
Multiple Quantum ◽  
Kinetics Of

ABSTRACTWe discuss the growth of M-plane GaN films and (In, Ga)N/GaN multiple quantum well (MQW) structures on LiAlO2(100) substrates by plasma-assisted molecular beam epitaxy. The adsorption and desorption kinetics of Ga on M-plane GaN is studied by reflection high-energy electron diffraction, allowing us to identify the optimum growth conditions with regard to surface morphology. Furthermore, we investigate the compositional profile of M-plane (In, Ga)N/GaN MQWs grown under conditions resulting in comparatively abrupt interfaces. The results demonstrate that significant In surface segregation occurs for the case of M-plane (In, Ga)N. The dependence of the transition energies of the M-plane MQWs on the actual well thickness reveals, however, that the structures are indeed free of electrostatic fields along the growth direction.

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