A two-dimensional analytical model for threshold voltage of short-channel triple-material double-gate metal-oxide-semiconductor field-effect transistors

Oxide Semiconductor ◽

Double Gate ◽

Two Dimensional ◽

Short Channel

A New Two-Dimensional Analytical Model for Short-Channel Symmetrical Dual-Material Double-Gate Metal–Oxide–Semiconductor Field Effect Transistors

10.1143/jjap.46.3283 ◽

2007 ◽

Vol 46 (6A) ◽

pp. 3283-3290 ◽

Cited By ~ 20

Author(s):

Te-Kuang Chiang ◽

Mei-Li Chen

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Oxide Semiconductor ◽

Double Gate ◽

Two Dimensional ◽

Short Channel ◽

Dual Material

A New Two-Dimensional Analytical Threshold Voltage Model for Short-Channel Triple-Material Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

10.1143/jjap.51.054301 ◽

2012 ◽

Vol 51 ◽

pp. 054301 ◽

Cited By ~ 5

Author(s):

Hsin-Kai Wang ◽

Sean Wu ◽

Te-Kuang Chiang ◽

Maw-Shung Lee

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Short Channel ◽

Surrounding Gate ◽

Threshold Voltage Model

A New Two-Dimensional Analytical Model for Nanoscale Symmetrical Tri-Material Gate Stack Double Gate Metal–Oxide–Semiconductor Field Effect Transistors

10.1143/jjap.48.104503 ◽

2009 ◽

Vol 48 (10) ◽

pp. 104503 ◽

Cited By ~ 12

Author(s):

Mei-Li Chen ◽

Wen-Kai Lin ◽

Shih-Fang Chen

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Oxide Semiconductor ◽

Double Gate ◽

Two Dimensional ◽

Gate Stack

A New Two-Dimensional Analytical Threshold Voltage Model for Short-Channel Triple-Material Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

10.7567/jjap.51.054301 ◽

2012 ◽

Vol 51 (5R) ◽

pp. 054301 ◽

Cited By ~ 14

Author(s):

Hsin-Kai Wang ◽

Sean Wu ◽

Te-Kuang Chiang ◽

Maw-Shung Lee

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Short Channel ◽

Surrounding Gate ◽

Threshold Voltage Model

New Analytical Model for Short-Channel Fully Depleted Dual-Material-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

10.1143/jjap.49.074304 ◽

2010 ◽

Vol 49 (7) ◽

pp. 074304 ◽

Cited By ~ 2

Author(s):

Te-Kuang Chiang

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

Fully Depleted ◽

Dual Material

Modeling of Subthreshold Swing and Analysis of Short-Channel Effects in Double-Gate Metal Oxide Semiconductor Field-Effect Transistors

10.1143/jjap.48.04c054 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C054

Author(s):

Kenta Ishimura ◽

Norio Sadachika ◽

Mitiko Miura-Mattausch

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Subthreshold Swing ◽

Oxide Semiconductor ◽

Double Gate ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

The effect of focused ion‐beam implantation on the threshold voltage of short‐channel silicon metal–oxide–semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.360469 ◽

1995 ◽

Vol 78 (12) ◽

pp. 7007-7017 ◽

Cited By ~ 2

Author(s):

Amer Ahmed ◽

S. Noor Mohammad ◽

Ronald L. Carter

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Focused Ion Beam ◽

Ion Beam ◽

Oxide Semiconductor ◽

Short Channel ◽

Ion Beam Implantation

An Efficient Quantum-Based Model for the Threshold Voltage of Thin Film Double Gate/Silicon on Insulator Silicon Metal Oxide Semiconductor Field Effect Transistors

10.1143/jjap.49.024304 ◽

2010 ◽

Vol 49 (2) ◽

pp. 024304 ◽

Cited By ~ 1

Author(s):

Saeed Mohammadi ◽

Ali Afzali-Kusha

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate

Analytical Modeling of Threshold Voltage of Short-Channel Strained-Si on Silicon–Germanium-On-Insulator (SGOI) Metal–Oxide–Semiconductor Field-Effect Transistors with Localized Charges

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2014.3332 ◽

2014 ◽

Vol 11 (1) ◽

pp. 165-172 ◽

Cited By ~ 1

Author(s):

Mirgender Kumar ◽

Sarvesh Dubey ◽

Pramod Kumar Tiwari ◽

S. Jit

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Silicon Germanium ◽

Field Effect ◽

Analytical Modeling ◽

Oxide Semiconductor ◽

Short Channel ◽

Strained Si

A two-dimensional model for the subthreshold swing of short-channel double-gate metal–oxide–semiconductor field effect transistors with a vertical Gaussian-like doping profile

Journal of Applied Physics ◽

10.1063/1.3552309 ◽

2011 ◽

Vol 109 (5) ◽

pp. 054508 ◽

Cited By ~ 14

Author(s):

Sarvesh Dubey ◽

Pramod Kumar Tiwari ◽

S. Jit

Keyword(s):

Field Effect ◽

Oxide Semiconductor ◽

Doping Profile ◽

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Short Channel ◽

Two Dimensional Model