Modeling of Subthreshold Swing and Analysis of Short-Channel Effects in Double-Gate Metal Oxide Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c054 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C054

Author(s):

Kenta Ishimura ◽

Norio Sadachika ◽

Mitiko Miura-Mattausch

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Subthreshold Swing ◽

Oxide Semiconductor ◽

Double Gate ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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An analytical model of triple-material double-gate metal-oxide-semiconductor field-effect transistor to suppress short-channel effects

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.2044 ◽

2015 ◽

Vol 29 (1) ◽

pp. 47-62 ◽

Author(s):

Biswajit Baral ◽

Aloke Kumar Das ◽

Debashis De ◽

Angsuman Sarkar

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects ◽

Effect Transistor

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Design of high speed Si/SiGe heterojunction complementary metal–oxide–semiconductor field effect transistors with reduced short-channel effects

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1474422 ◽

2002 ◽

Vol 20 (3) ◽

pp. 1030-1033 ◽

Author(s):

P. W. Li ◽

W. M. Liao

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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Wire-channel and wrap-around-gate metal–oxide–semiconductor field-effect transistors with a significant reduction of short channel effects

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589729 ◽

1997 ◽

Vol 15 (6) ◽

pp. 2791 ◽

Author(s):

Effendi Leobandung

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.2151 ◽

2004 ◽

Vol 43 (4B) ◽

pp. 2151-2155 ◽

Author(s):

Yongxun Liu ◽

Kenichi Ishii ◽

Meishoku Masahara ◽

Toshiyuki Tsutsumi ◽

Hidenori Takashima ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Short Channel Effects ◽

Short Channel ◽

Cross Sectional ◽

Shape Dependence ◽

Channel Effects

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Boron redistribution in arsenic‐implanted silicon and short‐channel effects in metal–oxide–semiconductor field effect transistors

Applied Physics Letters ◽

10.1063/1.108002 ◽

1992 ◽

Vol 61 (25) ◽

pp. 3038-3040 ◽

Author(s):

D. K. Sadana ◽

A. Acovic ◽

B. Davari ◽

D. Grutzmacher ◽

H. Hanafi ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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Simulation Analysis of Quantum Confinement and Short-Channel Effects in Independent Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.7013 ◽

2008 ◽

Vol 47 (9) ◽

pp. 7013-7018 ◽

Author(s):

Mathieu Moreau ◽

Daniela Munteanu ◽

Jean-Luc Autran

Keyword(s):

Quantum Confinement ◽

Field Effect ◽

Simulation Analysis ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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Influence of Effective Fixed Charges on Short-Channel Effects in SiC Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.024204 ◽

2010 ◽

Vol 49 (2) ◽

pp. 024204

Author(s):

Masato Noborio ◽

Jun Suda ◽

Tsunenobu Kimoto

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel Effects ◽

Short Channel ◽

Fixed Charges ◽

Channel Effects

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Diminished Short Channel Effects in Nanoscale Double-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect-Transistors due to Induced Back-Gate Step Potential

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.6508 ◽

2005 ◽

Vol 44 (9A) ◽

pp. 6508-6509 ◽

Author(s):

M. Jagadesh Kumar ◽

G. Venkateshwar Reddy

Keyword(s):

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

Short Channel Effects ◽

Short Channel ◽

Step Potential ◽

Back Gate ◽

Channel Effects

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A New Two-Dimensional Analytical Model for Short-Channel Symmetrical Dual-Material Double-Gate Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.3283 ◽

2007 ◽

Vol 46 (6A) ◽

pp. 3283-3290 ◽

Author(s):

Te-Kuang Chiang ◽

Mei-Li Chen

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Two Dimensional ◽

Short Channel ◽

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Modeling of Body Factor and Subthreshold Swing in Bulk Metal Oxide Semiconductor Field Effect Transistors in Short-Channel Regime

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.6173 ◽

2006 ◽

Vol 45 (8A) ◽

pp. 6173-6176 ◽

Author(s):

Arifin Tamsir Putra ◽

Masumi Saitoh ◽

Gen Tsutsui ◽

Toshiro Hiramoto

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Subthreshold Swing ◽

Oxide Semiconductor ◽

Short Channel ◽

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