Novel carbon‐dopedp‐channel GaAs metal‐semiconductor field‐effect transistor grown by metalorganic molecular beam epitaxy
1998 ◽
Vol 16
(5)
◽
pp. 2639
◽
2013 ◽
Vol 31
(4)
◽
pp. 041203
◽
Keyword(s):
Keyword(s):
1984 ◽
Vol 5
(7)
◽
pp. 285-287
◽
Keyword(s):
Keyword(s):