Structural, morphological, and defect properties of metamorphic In0.7Ga0.3As/GaAs0.35Sb0.65 p-type tunnel field effect transistor structure grown by molecular beam epitaxy
2013 ◽
Vol 31
(4)
◽
pp. 041203
◽
Keyword(s):
Keyword(s):
1984 ◽
Vol 5
(7)
◽
pp. 285-287
◽
Keyword(s):
Keyword(s):