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Structure and crystallization of low‐pressure chemical vapor deposited silicon films using Si2H6 gas
Journal of Applied Physics
◽
10.1063/1.350565
◽
1992
◽
Vol 71
(11)
◽
pp. 5427-5432
◽
Cited By ~ 30
Author(s):
C. H. Hong
◽
C. Y. Park
◽
H.‐J. Kim
Keyword(s):
Chemical Vapor
◽
Low Pressure
◽
Silicon Films
◽
Chemical Vapor Deposited
◽
Pressure Chemical
Download Full-text
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Cited By
References
Thermal conductivity of heavily doped low‐pressure chemical vapor deposited polycrystalline silicon films
Journal of Applied Physics
◽
10.1063/1.339924
◽
1988
◽
Vol 63
(5)
◽
pp. 1442-1447
◽
Cited By ~ 105
Author(s):
Y. C. Tai
◽
C. H. Mastrangelo
◽
R. S. Muller
Keyword(s):
Thermal Conductivity
◽
Polycrystalline Silicon
◽
Chemical Vapor
◽
Low Pressure
◽
Silicon Films
◽
Chemical Vapor Deposited
◽
Pressure Chemical
◽
Heavily Doped
◽
Polycrystalline Silicon Films
Download Full-text
Current‐voltage characteristics ofn‐amorphous low‐pressure chemical vapor deposited silicon films onp‐crystalline silicon
Journal of Applied Physics
◽
10.1063/1.343614
◽
1989
◽
Vol 66
(12)
◽
pp. 5894-5900
◽
Cited By ~ 1
Author(s):
N. Du
◽
S. Salkalachen
◽
J. Yao
◽
H. R. Froelich
◽
P. K. John
◽
...
Keyword(s):
Crystalline Silicon
◽
Chemical Vapor
◽
Low Pressure
◽
Silicon Films
◽
Current Voltage
◽
Chemical Vapor Deposited
◽
Pressure Chemical
◽
Current Voltage Characteristics
Download Full-text
Retardation of nucleation rate for grain size enhancement by deep silicon ion implantation of low‐pressure chemical vapor deposited amorphous silicon films
Journal of Applied Physics
◽
10.1063/1.343327
◽
1989
◽
Vol 65
(10)
◽
pp. 4036-4039
◽
Cited By ~ 72
Author(s):
I.‐W. Wu
◽
A. Chiang
◽
M. Fuse
◽
L. Öveçoglu
◽
T. Y. Huang
Keyword(s):
Grain Size
◽
Ion Implantation
◽
Amorphous Silicon
◽
Nucleation Rate
◽
Chemical Vapor
◽
Low Pressure
◽
Silicon Films
◽
Chemical Vapor Deposited
◽
Pressure Chemical
Download Full-text
Large grain polycrystalline silicon by low‐temperature annealing of low‐pressure chemical vapor deposited amorphous silicon films
Journal of Applied Physics
◽
10.1063/1.341065
◽
1988
◽
Vol 63
(7)
◽
pp. 2260-2266
◽
Cited By ~ 271
Author(s):
Miltiadis K. Hatalis
◽
David W. Greve
Keyword(s):
Low Temperature
◽
Amorphous Silicon
◽
Polycrystalline Silicon
◽
Chemical Vapor
◽
Low Pressure
◽
Silicon Films
◽
Low Temperature Annealing
◽
Chemical Vapor Deposited
◽
Pressure Chemical
Download Full-text
Characterization of hydrogenation and dehydrogenation of post‐plasma treated low‐pressure chemical‐vapor‐deposited amorphous silicon films
Journal of Applied Physics
◽
10.1063/1.339258
◽
1987
◽
Vol 62
(9)
◽
pp. 3740-3746
◽
Cited By ~ 5
Author(s):
Minoru Nakamura
◽
Toshiyuki Ohno
◽
Nobutake Konishi
◽
Kenji Miyata
◽
Norimasa Kamezawa
Keyword(s):
Amorphous Silicon
◽
Chemical Vapor
◽
Low Pressure
◽
Silicon Films
◽
Chemical Vapor Deposited
◽
Pressure Chemical
Download Full-text
Large grain polycrystalline silicon by low-temperature annealing of low-pressure chemical vapor deposited amorphous silicon films
Vacuum
◽
10.1016/0042-207x(89)90915-9
◽
1989
◽
Vol 39
(10)
◽
pp. 992
Keyword(s):
Low Temperature
◽
Amorphous Silicon
◽
Polycrystalline Silicon
◽
Chemical Vapor
◽
Low Pressure
◽
Silicon Films
◽
Low Temperature Annealing
◽
Chemical Vapor Deposited
◽
Pressure Chemical
Download Full-text
Erratum: ‘‘Thermal conductivity of heavily doped low‐pressure chemical vapor deposited polycrystalline silicon films’’ [J. Appl. Phys. 63, 1442 (1988)]
Journal of Applied Physics
◽
10.1063/1.344503
◽
1989
◽
Vol 66
(7)
◽
pp. 3420-3420
◽
Cited By ~ 4
Author(s):
Y. C Tai
◽
C. H. Mastrangelo
◽
R. S. Muller
Keyword(s):
Thermal Conductivity
◽
Polycrystalline Silicon
◽
Chemical Vapor
◽
Low Pressure
◽
Silicon Films
◽
Chemical Vapor Deposited
◽
Pressure Chemical
◽
Heavily Doped
◽
Polycrystalline Silicon Films
Download Full-text
Desorption Energy of Oxygen Adsorbed on Un-Intentionally Doped Low Pressure Chemical Vapor Deposited Silicon Films
Solid State Phenomena
◽
10.4028/www.scientific.net/ssp.37-38.151
◽
1994
◽
Vol 37-38
◽
pp. 151-156
Author(s):
D. Mostefa
◽
B. Fortin
◽
F. Raoult
◽
M. Sarret
◽
G. Rossé
◽
...
Keyword(s):
Chemical Vapor
◽
Low Pressure
◽
Silicon Films
◽
Desorption Energy
◽
Chemical Vapor Deposited
◽
Pressure Chemical
Download Full-text
Structure and crystal growth of atmospheric and low‐pressure chemical‐vapor‐deposited silicon films
Journal of Applied Physics
◽
10.1063/1.336554
◽
1986
◽
Vol 59
(4)
◽
pp. 1167-1178
◽
Cited By ~ 90
Author(s):
R. Bisaro
◽
J. Magariño
◽
N. Proust
◽
K. Zellama
Keyword(s):
Crystal Growth
◽
Chemical Vapor
◽
Low Pressure
◽
Silicon Films
◽
Chemical Vapor Deposited
◽
Pressure Chemical
Download Full-text
Thickness effects on microstructural evolution of low-pressure-chemical-vapor-deposited amorphous silicon films during excimer-laser-induced crystallization
Thin Solid Films
◽
10.1016/j.tsf.2005.07.304
◽
2005
◽
Vol 493
(1-2)
◽
pp. 185-191
◽
Cited By ~ 1
Author(s):
In-Cha Hsieh
◽
Bing-Rui Wu
◽
Shui-Yang Lien
◽
Dong-Sing Wuu
Keyword(s):
Amorphous Silicon
◽
Excimer Laser
◽
Microstructural Evolution
◽
Chemical Vapor
◽
Low Pressure
◽
Silicon Films
◽
Chemical Vapor Deposited
◽
Pressure Chemical
◽
Induced Crystallization
Download Full-text
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