Retardation of nucleation rate for grain size enhancement by deep silicon ion implantation of low‐pressure chemical vapor deposited amorphous silicon films

1989 ◽  
Vol 65 (10) ◽  
pp. 4036-4039 ◽  
Author(s):  
I.‐W. Wu ◽  
A. Chiang ◽  
M. Fuse ◽  
L. Öveçoglu ◽  
T. Y. Huang
Keyword(s):  
Grain Size ◽  
Ion Implantation ◽  
Amorphous Silicon ◽  
Nucleation Rate ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silicon Films ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical

Characterization of hydrogenation and dehydrogenation of post‐plasma treated low‐pressure chemical‐vapor‐deposited amorphous silicon films

1987 ◽  
Vol 62 (9) ◽  
pp. 3740-3746 ◽  
Author(s):  
Minoru Nakamura ◽  
Toshiyuki Ohno ◽  
Nobutake Konishi ◽  
Kenji Miyata ◽  
Norimasa Kamezawa
Keyword(s):  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silicon Films ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical
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