Desorption Energy of Oxygen Adsorbed on Un-Intentionally Doped Low Pressure Chemical Vapor Deposited Silicon Films

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.37-38.151 ◽

1994 ◽

Vol 37-38 ◽

pp. 151-156

Author(s):

D. Mostefa ◽

B. Fortin ◽

F. Raoult ◽

M. Sarret ◽

G. Rossé ◽

...

Keyword(s):

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Desorption Energy ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Thermal conductivity of heavily doped low‐pressure chemical vapor deposited polycrystalline silicon films

Journal of Applied Physics ◽

10.1063/1.339924 ◽

1988 ◽

Vol 63 (5) ◽

pp. 1442-1447 ◽

Author(s):

Y. C. Tai ◽

C. H. Mastrangelo ◽

R. S. Muller

Keyword(s):

Thermal Conductivity ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Heavily Doped ◽

Polycrystalline Silicon Films

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Current‐voltage characteristics ofn‐amorphous low‐pressure chemical vapor deposited silicon films onp‐crystalline silicon

Journal of Applied Physics ◽

10.1063/1.343614 ◽

1989 ◽

Vol 66 (12) ◽

pp. 5894-5900 ◽

Author(s):

N. Du ◽

S. Salkalachen ◽

J. Yao ◽

H. R. Froelich ◽

P. K. John ◽

...

Keyword(s):

Crystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Current Voltage ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Current Voltage Characteristics

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Retardation of nucleation rate for grain size enhancement by deep silicon ion implantation of low‐pressure chemical vapor deposited amorphous silicon films

Journal of Applied Physics ◽

10.1063/1.343327 ◽

1989 ◽

Vol 65 (10) ◽

pp. 4036-4039 ◽

Author(s):

I.‐W. Wu ◽

A. Chiang ◽

M. Fuse ◽

L. Öveçoglu ◽

T. Y. Huang

Keyword(s):

Ion Implantation ◽

Amorphous Silicon ◽

Nucleation Rate ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Large grain polycrystalline silicon by low‐temperature annealing of low‐pressure chemical vapor deposited amorphous silicon films

Journal of Applied Physics ◽

10.1063/1.341065 ◽

1988 ◽

Vol 63 (7) ◽

pp. 2260-2266 ◽

Author(s):

Miltiadis K. Hatalis ◽

David W. Greve

Keyword(s):

Low Temperature ◽

Amorphous Silicon ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Low Temperature Annealing ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Characterization of hydrogenation and dehydrogenation of post‐plasma treated low‐pressure chemical‐vapor‐deposited amorphous silicon films

Journal of Applied Physics ◽

10.1063/1.339258 ◽

1987 ◽

Vol 62 (9) ◽

pp. 3740-3746 ◽

Author(s):

Minoru Nakamura ◽

Toshiyuki Ohno ◽

Nobutake Konishi ◽

Kenji Miyata ◽

Norimasa Kamezawa

Keyword(s):

Amorphous Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Structure and crystallization of low‐pressure chemical vapor deposited silicon films using Si2H6 gas

Journal of Applied Physics ◽

10.1063/1.350565 ◽

1992 ◽

Vol 71 (11) ◽

pp. 5427-5432 ◽

Author(s):

C. H. Hong ◽

C. Y. Park ◽

H.‐J. Kim

Keyword(s):

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Large grain polycrystalline silicon by low-temperature annealing of low-pressure chemical vapor deposited amorphous silicon films

Vacuum ◽

10.1016/0042-207x(89)90915-9 ◽

1989 ◽

Vol 39 (10) ◽

pp. 992

Keyword(s):

Low Temperature ◽

Amorphous Silicon ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Low Temperature Annealing ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Erratum: ‘‘Thermal conductivity of heavily doped low‐pressure chemical vapor deposited polycrystalline silicon films’’ [J. Appl. Phys. 63, 1442 (1988)]

Journal of Applied Physics ◽

10.1063/1.344503 ◽

1989 ◽

Vol 66 (7) ◽

pp. 3420-3420 ◽

Author(s):

Y. C Tai ◽

C. H. Mastrangelo ◽

R. S. Muller

Keyword(s):

Thermal Conductivity ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Heavily Doped ◽

Polycrystalline Silicon Films

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Structure and crystal growth of atmospheric and low‐pressure chemical‐vapor‐deposited silicon films

Journal of Applied Physics ◽

10.1063/1.336554 ◽

1986 ◽

Vol 59 (4) ◽

pp. 1167-1178 ◽

Author(s):

R. Bisaro ◽

J. Magariño ◽

N. Proust ◽

K. Zellama

Keyword(s):

Crystal Growth ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Thickness effects on microstructural evolution of low-pressure-chemical-vapor-deposited amorphous silicon films during excimer-laser-induced crystallization

Thin Solid Films ◽

10.1016/j.tsf.2005.07.304 ◽

2005 ◽

Vol 493 (1-2) ◽

pp. 185-191 ◽

Author(s):

In-Cha Hsieh ◽

Bing-Rui Wu ◽

Shui-Yang Lien ◽

Dong-Sing Wuu

Keyword(s):

Amorphous Silicon ◽

Excimer Laser ◽

Microstructural Evolution ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Induced Crystallization

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