Deposition and surface characterization of high quality single crystal GaN layers

1993 ◽  
Vol 73 (6) ◽  
pp. 3108-3110 ◽  
Author(s):  
M. Asif Khan ◽  
J. N. Kuznia ◽  
D. T. Olson ◽  
R. Kaplan
Keyword(s):  
Single Crystal ◽  
Surface Characterization ◽  
High Quality ◽  
High Quality Single Crystal

Magnetron sputtering growth and characterization of high quality single crystal Ga-doped n-ZnO thin films

2005 ◽  
Vol 20 (9) ◽  
pp. L43-L46 ◽  
Author(s):  
Tae-hwan Kim ◽  
Sang-Hun Jeong ◽  
Il-Soo Kim ◽  
Sang Sub Kim ◽  
Byung-Teak Lee
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Single Crystal ◽  
Zno Thin Films ◽  
High Quality ◽  
High Quality Single Crystal

Growth and characterization of columbite CaNb2O6 high quality single crystal fiber

2004 ◽  
Vol 262 (1-4) ◽  
pp. 246-250 ◽  
Author(s):  
R. de Almeida Silva ◽  
A.S.S. de Camargo ◽  
C. Cusatis ◽  
L.A.O. Nunes ◽  
J.P. Andreeta
Keyword(s):  
Single Crystal ◽  
High Quality ◽  
High Quality Single Crystal ◽  
Crystal Fiber

Materials with Dirac Loops: A Potential Solution for Next-generation Electronics

2021 ◽  
Vol 1 ◽  
Keyword(s):  
Electronic Structure ◽  
Single Crystal ◽  
Potential Solution ◽  
Next Generation ◽  
Rhenium Oxide ◽  
High Quality ◽  
High Quality Single Crystal

A high-quality single crystal of rhenium oxide shows significantly large magnetoresistance, potentially originating from a unique electronic structure called “hourglass Dirac chain” protected by the symmetry of the crystal.

Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer Deposition

2019 ◽  
Vol 19 (4) ◽  
pp. 2030-2036 ◽  
Author(s):  
Lawrence Boyu Young ◽  
Chao-Kai Cheng ◽  
Keng-Yung Lin ◽  
Yen-Hsun Lin ◽  
Hsien-Wen Wan ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Single Crystal ◽  
Atomic Layer ◽  
High Quality ◽  
High Quality Single Crystal ◽  
Layer Deposition

Growth and Characterization of Single Crystal Epitaxial CoGa on MBE Grown III-V Semiconductors

1988 ◽  
Vol 144 ◽  
Author(s):  
K. C. Garrison ◽  
C. J. Palmstrøm ◽  
R. A. Bartynski
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Single Crystals ◽  
Structural Quality ◽  
High Quality ◽  
Auger Analysis ◽  
Post Deposition

ABSTRACTWe have demonstrated growth of high quality single crystal CoGa films on Ga1−xAlxAs. These films were fabricated in-situ by codeposition of Co and Ga on MBE grown Ga1−xAlxAs(100) surfaces. The elemental composition of the films was determined using Rutherford Backscattering (RBS) and in-situ Auger analysis. The structural quality of the films' surfaces was studied using RHEED (during deposition) and LEED (post deposition). RBS channeling was used to determine the bulk crystalline quality of these films.For ∼500 Å CoGa films grown at ∼450°C substrate temperature, channeling data showed good quality epitaxial single crystals [χmin ∼7%] with minimal dechanneling at the interface.

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