On the relationship between interfacial defects and Schottky barrier height in Ag, Au, and Al/n‐GaAs contacts

We clarified the relationship between the enhanced leakage current of SiC Junction Barrier Schottky diodes and the stacking faults in the SiC crystal at the SiC and metal electrode interface by measuring the electrical and optical properties, and confirm by using the numerical simulations. Numerical simulation considering local lowering of Schottky barrier height, which is 0.8 eV lower than that of 4H-SiC well explained the 2-4 orders of magnitude higher reverse leakage current caused by the SFs. We concluded that the locally lowering of the Schottky barrier height at the 3C-SiC layer in the 4H-SiC surface is a main cause of the large reverse leakage current.

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On the relationship between the surface composition of the substrate and the Schottky barrier height in Au/n‐CdTe contacts

Journal of Applied Physics ◽

10.1063/1.349458 ◽

1991 ◽

Vol 70 (4) ◽

pp. 2200-2203 ◽

Cited By ~ 17

Author(s):

R. L. Van Meirhaeghe ◽

R. van de Walle ◽

W. H. Laflère ◽

F. Cardon

Keyword(s):

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

Surface Composition ◽

The Relationship

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Ab Initio Study of SiC/Metal Polar Interfaces: Relation Between Interface Structure and Schottky-Barrier Height

MRS Proceedings ◽

10.1557/proc-640-h5.18 ◽

2000 ◽

Vol 640 ◽

Author(s):

Shingo Tanaka ◽

Masanori Kohyama

Keyword(s):

Ab Initio ◽

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

Adhesive Energy ◽

Work Functions ◽

The Difference ◽

Cubic Silicon Carbide ◽

The Relationship ◽

Dynamics Method

ABSTRACTAb initio calculations of the polar interfaces between thin films of titanium and cubic silicon-carbide (SiC) have been performed by using the first-principles molecular dynamics method. Stable configurations, adhesive energies and Schottky-barrier height (SBH) for the Si-terminated and the C-terminated interfaces are obtained. The C-terminated interface has covalent C-Ti bonds, while the Si-terminated interface has shown metallic nature. Adhesive energy/SBH of the C-terminated interface is larger/smaller than that of the Si-terminated one, respectively. In order to examine a conventional SBH model, work functions of SiC slab with Si and with C surface and Ti slab have been calculated and SBHs have been estimated from the difference of work functions. In estimated SBHs between the interfaces, the relationship depend on the crystal orientation as (111) and (001).

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ELECTRONIC TRANSPORT IN EPITAXIAL FILMS STUDIED BY SCANNING PROBE TECHNIQUES

Surface Review and Letters ◽

10.1142/s0218625x97000304 ◽

1997 ◽

Vol 04 (02) ◽

pp. 307-318

Author(s):

H. VON KÄNEL ◽

H. SIRRINGHAUS ◽

T. MEYER ◽

E. Y. LEE

Keyword(s):

Film Thickness ◽

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

Thickness Distribution ◽

Scanning Tunneling Spectroscopy ◽

Hole Injection ◽

Scanning Tunneling ◽

Hot Electron ◽

Interfacial Defects

Hot electron transport in epitaxial CoSi2/Si heterostructures has been studied in situ by ballistic electron emission microscopy (BEEM) at 77 K. At CoSi2/Si(111) interfaces elastic scattering at interfacial defects could be imaged with spatial resolution on a nanometer scale. Hot electron injection across CoSi2/n-Si(111) interfaces was found to be favored by interface scattering, in contrast to hot hole injection across CoSi2/p-Si(111) , in agreement with expectations based on the projected Si band structure. Inelastic scattering within the metal film was found to become dominant at energies above ~4 eV, leading to a strong sensitivity of the BEEM current on film thickness variations. This could be exploited to generate maps of the film thickness distribution, facilitating the interpretation of quantum size effects (QSE's) which appear both in BEEM and in scanning tunneling spectroscopy. The variation of the BEEM current was found to be entirely due to scattering effects at CoSi2/Si(111) interfaces, the Schottky barrier height being constant. At CoSi2/Si(100) interfaces, however, a pronounced decrease in the Schottky barrier height was observed at certain interfacial defects, some of which are not yet identified.

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Anisotropic effect of piezoelectric polarization on Schottky barrier height in elastically deformed bulk GaN crystal

Applied Physics Letters ◽

10.1063/1.3665250 ◽

2011 ◽

Vol 99 (22) ◽

pp. 222106 ◽

Cited By ~ 6

Author(s):

Roman Nowak

Keyword(s):

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

Piezoelectric Polarization ◽

Anisotropic Effect ◽

Bulk Gan ◽

Gan Crystal

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A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽

10.3390/nano11051188 ◽

2021 ◽

Vol 11 (5) ◽

pp. 1188

Author(s):

Ivan Rodrigo Kaufmann ◽

Onur Zerey ◽

Thorsten Meyers ◽

Julia Reker ◽

Fábio Vidor ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Schottky Barrier ◽

Barrier Height ◽

Flexible Electronics ◽

Thin Film Transistors ◽

Zinc Oxide Nanoparticles ◽

Schottky Barrier Height ◽

Oxide Nanoparticles ◽

Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

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