ELECTRONIC TRANSPORT IN EPITAXIAL FILMS STUDIED BY SCANNING PROBE TECHNIQUES

Hot electron transport in epitaxial CoSi2/Si heterostructures has been studied in situ by ballistic electron emission microscopy (BEEM) at 77 K. At CoSi2/Si(111) interfaces elastic scattering at interfacial defects could be imaged with spatial resolution on a nanometer scale. Hot electron injection across CoSi2/n-Si(111) interfaces was found to be favored by interface scattering, in contrast to hot hole injection across CoSi2/p-Si(111) , in agreement with expectations based on the projected Si band structure. Inelastic scattering within the metal film was found to become dominant at energies above ~4 eV, leading to a strong sensitivity of the BEEM current on film thickness variations. This could be exploited to generate maps of the film thickness distribution, facilitating the interpretation of quantum size effects (QSE's) which appear both in BEEM and in scanning tunneling spectroscopy. The variation of the BEEM current was found to be entirely due to scattering effects at CoSi2/Si(111) interfaces, the Schottky barrier height being constant. At CoSi2/Si(100) interfaces, however, a pronounced decrease in the Schottky barrier height was observed at certain interfacial defects, some of which are not yet identified.

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The Importance of Schottky Barrier Height in Plasmonically Enhanced Hot‐Electron Devices

Advanced Optical Materials ◽

10.1002/adom.202001121 ◽

2020 ◽

pp. 2001121

Author(s):

Shenyou Zhao ◽

Yanting Yin ◽

Jun Peng ◽

Yiliang Wu ◽

Gunther G. Andersson ◽

...

Keyword(s):

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

Hot Electron ◽

Electron Devices

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On the relationship between interfacial defects and Schottky barrier height in Ag, Au, and Al/n‐GaAs contacts

Journal of Applied Physics ◽

10.1063/1.354797 ◽

1993 ◽

Vol 74 (3) ◽

pp. 1885-1889 ◽

Cited By ~ 56

Author(s):

R. van de Walle ◽

R. L. Van Meirhaeghe ◽

W. H. Laflère ◽

F. Cardon

Keyword(s):

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

Interfacial Defects ◽

The Relationship

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Interfacial Diffusion/Reaction and Electrical Properties of Pd Ultra-Thin Film on Sic at Different Annealing Temperatures

MRS Proceedings ◽

10.1557/proc-512-339 ◽

1998 ◽

Vol 512 ◽

Author(s):

W. Lu ◽

D. T. Shi ◽

W. E. Collins ◽

H. Chen ◽

A. Burger

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

Hydrogen Gas ◽

Diffusion Reaction ◽

Scanning Tunneling ◽

Annealing Temperatures ◽

Ultra Thin Film

ABSTRACTPd/SiC has been used as a high temperature hydrocarbon and hydrogen gas sensor in environmental and aeronautical applications. In this work, the relationships between diffusion, reaction, and interfacial chemical composition with electrical properties for Pd ultra-thin films on 6H-SiC (∼< 30Å) are studied at different annealing temperatures.Ultra-thin film Pd on 6H-SiC has been prepared by the RF sputtering method. The Schottky barrier heights are measured by XPS for an unannealed sample and samples annealed from 100°C to 400°C for 30 minutes, respectively. No significant change in the Schottky barrier height of the Pd/SiC contact was found in the temperature range. The morphology from UHV-STM and AFM show that the unannealed Pd thin film had good uniformity across the SiC substrate, and the Pd has dispersed, and then partially aggregated into rounded shaped precipitates with increasing annealing temperatures. At 400°C, all Pd metal has reacted and formed to silicides. From XPS, Pd2Si was found on the surface after annealing, and almost all Pd has reacted to become Pd2Si after annealing at 400°C. No other silicide was found. The intensity of Pd on XPS decreases enormously at 400°C. This is explained if Pd has diffused into SiC. The Pd diffusion and the formation of Pd silicides do not significantly affect the Schottky barrier height. The SiO2 was found at the top of surface after annealing, and increased in amount with increasing annealing temperature. The SiO2 formation was accelerated by the presence of Pd. Pd may play a role in absorbing oxygen, and activating Si from SiC to form SiO2.Key Words: Pd thin film, SiC, X-ray photoelectron spectroscopy, scanning tunneling microscopy, and atomic force microscopy.

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Reliable determination of the Cu/n-Si Schottky barrier height by using in-device hot-electron spectroscopy

Applied Physics Letters ◽

10.1063/1.4934885 ◽

2015 ◽

Vol 107 (18) ◽

pp. 183502 ◽

Cited By ~ 6

Author(s):

Subir Parui ◽

Ainhoa Atxabal ◽

Mário Ribeiro ◽

Amilcar Bedoya-Pinto ◽

Xiangnan Sun ◽

...

Keyword(s):

Schottky Barrier ◽

Barrier Height ◽

Electron Spectroscopy ◽

Schottky Barrier Height ◽

Hot Electron ◽

Reliable Determination

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Anisotropic effect of piezoelectric polarization on Schottky barrier height in elastically deformed bulk GaN crystal

Applied Physics Letters ◽

10.1063/1.3665250 ◽

2011 ◽

Vol 99 (22) ◽

pp. 222106 ◽

Cited By ~ 6

Author(s):

Roman Nowak

Keyword(s):

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

Piezoelectric Polarization ◽

Anisotropic Effect ◽

Bulk Gan ◽

Gan Crystal

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A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽

10.3390/nano11051188 ◽

2021 ◽

Vol 11 (5) ◽

pp. 1188

Author(s):

Ivan Rodrigo Kaufmann ◽

Onur Zerey ◽

Thorsten Meyers ◽

Julia Reker ◽

Fábio Vidor ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Schottky Barrier ◽

Barrier Height ◽

Flexible Electronics ◽

Thin Film Transistors ◽

Zinc Oxide Nanoparticles ◽

Schottky Barrier Height ◽

Oxide Nanoparticles ◽

Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

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